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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF338/D
NPN Silicon RF Power Transistor
Designed primarily for wideband large-signal output and driver amplifier stages in the 400 to 512 MHz frequency range. * Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) * Built-In Matching Network for Broadband Operation * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications
MRF338
80 W, 400 to 512 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON
CASE 333-04, STYLE 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 60 4 9 12 250 1.43 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 0.7 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4 -- -- -- -- -- -- Vdc Vdc Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF338 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CBO ICBO 60 -- -- -- -- 5 Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4 Adc, VCE = 5 Vdc) hFE 20 -- 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 MHz) Cob -- 95 125 pF
FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz, VSWR = 30:1, All Phase Angles at Frequency of Test) GPE No Degradation in Output Power 7.3 50 8.8 60 -- -- dB %
RFC1 C14 R2 C13 + -
L4 +
VCC 28 V
C12 L3 C11 R1 DUT RF INPUT Z1 L1 C1 BEAD C5 C2 C3 C4 C6 C7 L2
C15
C10 Z2 Z3 Z4
RF OUTPUT
C8
C9
Bead C1, C2, C8, C9 C3, C4, C6, C7 C5, C10 C11, C13 C12, C14 C15 L1 L2
Ferroxcube #56-590-65/3B 0.8 - 20 pF, Johanson (JMC 5501) 25 pF, 100 V, Underwood 100 pF, 100 V, Underwood 0.1 F, Erie Redcap 680 pF, Feedthru 1.0 F, Tantalum 0.15 H, Molded Choke 5 Turns #20 AWG, 0.185 ID, Close Wound
L3 L4 RFC1 R1, R2 Z1 Z2 Z3 Z4 Board
3 Turns #18 AWG, 0.185 ID, Close Wound 4 Turns #18 AWG, 0.185 ID, Close Wound Ferroxcube VK200 19/4B 10 , 2.0 Watt Carbon 0.190 W x 2.5 L, Microstrip Lin 0.190 W x 0.289 L, Microstrip Line 0.190 W x 0.55 L, Microstrip Line 0.190 W x 0.325 L, Microstrip Line Glass Teflon, t = 0.062, r = 2.56
Figure 1. 470 MHz Test Circuit
MRF338 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
100 f = 470 MHz Pout , OUTPUT POWER (WATTS) 80 512 MHz Pout , OUTPUT POWER (WATTS) 80 12 W 10 W 60 100 Pin = 14 W
60
400 MHz
40
40
20
VCC = 28 Vdc 16
20
f = 470 MHz
0 0 4 8 12 Pin, INPUT POWER (WATTS)
20
0 12
14
16
18
20
22
24
26
28
VCC, SUPPLY VOLTAGE (V)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
10 Pout , OUTPUT POWER (WATTS) 9
100 Pin = 16 W 80 12 W 8.0 W
G PE, POWER GAIN (dB)
8
60
7
40
6
VCC = 28 Vdc Pout = 80 W 425 450 475 500 525
20 VCC = 28 Vdc 0 400 425 450 475 500 525
5 400
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 4. Power Gain versus Frequency
Figure 5. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF338 3
512 470 450 ZOL* f = 400 MHz Zo = ?? 500
512 500 Zin 470
f = 400 MHz 450
f MHz 512 500 470 450 400
VCC = 28 V, Pout = 80 W Zin ZOL* Ohms Ohms 0.91 + j2.61 1.47 + j2.71 1.53 + j2.98 1.27 + j3.09 0.86 + j3.01 1.19 + j1.34 1.33 + j0.96 1.60 + j0.45 1.70 + j0.25 2.58 - j0.79
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 6. Series Equivalent Input/Output Impedance
MRF338 4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
-A- N D
2 1 3
Q
2 PL
0.13 (0.005) K -B- K
M
TA
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 EMITTER COLLECTOR EMITTER BASE MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42
P
4
F G
J H
N
N C -T-
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4.
CASE 333-04 ISSUE E
MOTOROLA RF DEVICE DATA
MRF338 5
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MRF338 6
MRF338/D MOTOROLA RF DEVICE DATA

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