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AP2604GY Pb Free Plating Product Advanced Power Electronics Corp. Fast Switching Characteristic Lower Gate Charge Small Footprint & Low Profile Package RoHS Compliant SOT-26 D D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D 30V 45m 5.5A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 20 5.5 4.4 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200517051-1/4 AP2604GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.02 7 6 2 3 6 8 15 4 440 105 35 Max. Units 45 65 3 1 25 100 10 705 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=4.8A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=4.8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=4.8A, VGS=0V IS=4.8A, VGS=0V, dI/dt=100A/s Min. - Typ. 15 7 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad. 2/4 AP2604GY 40 35 35 T A =25 o C 10V 7.0V ID , Drain Current (A) 30 T A =150 o C 10V 7.0V 5.0V 4.5V 30 25 ID , Drain Current (A) 25 5.0V 4.5V 20 20 15 15 10 10 5 V G =3.0V 5 V G =3.0V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 I D = 2.4 A 65 1.6 T A =25 C Normalized RDS(ON) 1.4 o I D =4.8A V G =10V RDS(ON) (m) 55 1.2 45 1.0 35 0.8 25 3 5 7 9 11 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 5 1.6 4 1.4 VGS(th)(V) 1.4 3 IS(A) T j =150 o C 2 T j =25 o C 1.2 1 1 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2604GY f=1.0MHz 16 1000 I D =4.8A VGS , Gate to Source Voltage (V) C iss 12 V DS =15V V DS =20V V DS =24V C (pF) 100 8 C oss 4 C rss 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 0.2 10 0.1 0.1 1ms ID (A) 1 0.05 PDM 0.01 10ms 100ms 0.1 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 156/W T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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