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CHIPLED LG R971 Besondere Merkmale q q q q q q Gehausebauform: 0805 Industriestandard bzgl. Lotpadraster geringe Bauteilhohe fur IR-Lotung geeignet fur Hinterleuchtungen und als opt. Indikator einsetzbar gegurtet (8-mm-Filmgurt) VEO06987 Features q q q q q q 0805 package Industry standard footprint low profile suitable for IR reflow soldering process for use as optical indicator and backlighting available taped on reel (8 mm tape) Typ Type Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area green colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 20 mA I V (mcd) 6.30 (12 typ.) Luminous Flux IF = 20 mA V (mlm) 100 (typ.) Ordering Code LG R971-KO Q62702-P5099 Semiconductor Group 1 1998-08-28 LG R971 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current tp 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Sperrschicht / Umgebung Thermal resistance Junction / air Symbol Symbol Werte Values - 30 ... + 85 - 40 ... + 85 + 95 25 0.1 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5 70 610 V mW K/W Semiconductor Group 2 1998-08-28 LG R971 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite Spectral bandwidth IF = 20 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 5 V (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol Werte Values 565 Einheit Unit nm peak dom 570 nm 26 nm 2 160 2.3 2.6 0.01 10 0.06 0.10 Grad deg. V V A A nm/K nm/K VF VF IR IR TC TC Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA Temperaturkoeffizient von (IF = 20 mA) Temperature coefficient of (IF = 20 mA) Temperaturkoeffizient von VF, IF = 20 mA (typ.) Temperature coefficient of VF, IF = 20 mA (typ.) Temperaturkoeffizient von IV, IF = 20 mA (typ.) Temperature coefficient of IV, IF = 20 mA (typ.) (typ.) (typ.) TC TCV TCIv 0.03 - 1.3 - 0.3 nm/K mV/K %/K Semiconductor Group 3 1998-08-28 LG R971 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve 1.0 rel % 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 450 500 550 600 650 700 nm 750 OHL00406 V Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL00408 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 4 1998-08-28 LG R971 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 OHL00407 Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C 10 1 V V (20 mA) 10 0 OHL00409 F mA 10 1 10 0 10 -1 10 -1 10 -2 10 -2 10 -3 10 -3 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 V 3.2 10 -4 -1 10 10 0 10 1 mA 10 2 VF F Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 30 mA 25 OHL00405 F 20 15 10 5 0 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-08-28 LG R971 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 0.8 0.1 1.25 0.1 Kathode/ Cathode mark 0.3 0.1 1.3 0.1 1.2 0.1 2 0.1 0.29 0.1 0.5 0.1 GEO06987 Semiconductor Group 6 1998-08-28 |
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