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| 1SR153-400 Diodes Rectifier diode 1SR153-400 !Applications High speed rectification !External dimensions (Units : mm) CATHODE BAND (SILVER) !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability. 0.60.1 29.01.0 3.00.2 29.01.0 2.50.2 !Construction Silicon diffused junction Type No. and date of manufacture stamped on body in digital marking. Date of manufacture 1999.12 9.N ROHM : MSR Model name 1SR153-400 4 EIAJ : - JEDEC : DO-41 mini !Absolute maximum ratings (Ta = 25C) Parameter Absolute peak reverse voltage Peak reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRSM VRM IO IFSM Tj Tstg Limits 500 400 1.0 30 150 -40~+150 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - - - Typ. - - - Max. 1.3 10 0.4 Unit V A s IF=0.8A VR=400V Conditions IF=IR=10mA, Irr=1mA 1SR153-400 Diodes !Electrical characteristic curves (Ta = 25C) 10 FORWARD CURRENT : IF (A) 105 1 104 75C REVERSE RECOVERY TIME : trr (ns) 125C 500 IR=10mA Irr=1mA 400 100m REVERSE CURRENT : IR (nA) 103 25C 300 10m 125C -25C 25C 75C 102 -25C 200 1m 10 100 0.1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 0 100 200 300 400 500 600 700 0 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) FORWARD CURRENT : IF (mA) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Reverse recovery time characteristics AVERAGE RECTIFIED CURRENT : IO (A) 0.8 SURGE FORWARD CURRENT : IFSM (A) 1.0 RE SIS TIV E 50 40 30 20 10 0 1 0.6 CA PA AN D IN DU TI CI 0.4 VE LO CT IVE LO AD P=50% 0.2 AD 0 0 25 50 100 150 200 3 5 10 30 50 100 AMBIENT TEMPERATURE : Ta (C) CYCLES at 60 Hz Fig.4 Derating curve Fig.5 Surge current characteristics 10 D.U.T. 500 PULSE GENERATOR 10 OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit This datasheet has been download from: www..com Datasheets for electronics components. |
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