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CXT491E SURFACE MOUNT NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CXT491E type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. Marking Code: Full Part Number SOT-89 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Current (Peak) ICM Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA
80 60 5.0 1.0 200 2.0 1.2 -65 to +150 104
UNITS V V V A mA A W C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob TEST CONDITIONS VCB=60V VEB=4.0V IC=100A IC=10mA IE=100A IC=500mA, IB=50mA IC=1.0A, IB=100mA IC=1.0A, IB=100mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=1.0mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN MAX 100 100 UNITS nA nA V V V V V V V
80 60 5.0 0.20 0.40 1.1 1.0 200 200 50 15 150 600
10
MHz pF R1 (20-May 2004)
Central
TM
CXT491E SURFACE MOUNT NPN SILICON TRANSISTOR
Semiconductor Corp.
SOT-89 CASE - MECHANICAL OUTLINE
BOTTOM VIEW
DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.055 0.067 1.40 1.70 B 4 4 C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70 4.50 G 0.090 0.106 2.29 2.70 H 0.028 0.051 0.70 1.30 J 0.014 0.019 0.36 0.48 K 0.017 0.023 0.44 0.58 L 0.059 1.50 M 0.118 3.00 SOT-89 (REV: R4)
LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING CODE: Full Part Number
R1 (20-May 2004)

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