View CED63A3_743476.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 55A, RDS(ON) = 11m @VGS = 10V. RDS(ON) = 14m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED63A3/CEU63A3
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
20
55 150 57 0.45 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.2 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2006.Nov http://www.cetsemi.com
CED63A3/CEU63A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 30A VDS = 15V, ID = 45A, VGS = 10V VDD = 15V, ID = 45A, VGS = 10V, RGEN = 24 17 17.8 157 78 33.2 5.5 8.3 30 1.2 35 35.6 226 156 45.4 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 30A VGS = 4.5V, ID = 24A VDS = 10V, ID = 30A 1 8.5 11 22 2115 405 255 Min 30 1 100 -100 3 11 14 Typ Max Units V
A
nA nA V m m S pF pF pF
6
VDS = 15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
2
CED63A3/CEU63A3
50 40 30 VGS=10,8,6,5V 75 60 45 30 25 C 15 TJ=125 C 0 0 1 2 3 4 0 0 1 2 3 -55 C 4 5
ID, Drain Current (A)
VGS=4V
20 10
VGS=3V
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
2400 2000 1600 1200 800 400 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=30A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
2
VTH, Normalized Gate-Source Threshold Voltage
ID=250A
10
1
-25
0
25
50
75
100
125
150
10
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED63A3/CEU63A3
VGS, Gate to Source Voltage (V)
10 V =15V DS ID=45A 10
3
RDS(ON)Limit
ID, Drain Current (A)
8 6 4 2 0
10
2
100ms 1ms 10ms DC TC=25 C TJ=150 C Single Pulse 10
-1
10
1
6
1
0
9
18
27
36
10
0
10
0
10
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RcJC (t)=r (t) * RcJC 2. RcJC =See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4

▲Up To Search▲

Price & Availability of CED63A3

	To Download CED63A3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .