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PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25C to 150C IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = 500 V 26 A 230 m 200 ns Maximum Ratings 500 500 30 40 26 78 26 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C TO-247 (IXFH) TJ = 25C to 150C; RGS = 1 M Continuos Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) 1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque Mounting force (TO-247) (PLUS220SMD) 300 260 G S G = Gate S = Source D (TAB) D = Drain TAB = Drain 1.13/10 Nm/lb.in. 11..65/2.5..15 6 5 N/lb g g TO-3P PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 3.0 5.0 100 25 250 230 V V nA A A m Features International standard packages Fast intrinsic diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99276A(09/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 370 57 20 VGS = 10 V, VDS = 0.5 ID25 RG = 4 (External) 25 58 20 60 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 25 0.31 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S 1 2 3 IXFV 26N50P IXFV 26N50PS TO-247 AD (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.5 300 3.3 A A V ns C L1 IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V PLUS220 (IXFV) Outline E E1 L2 A A1 E1 D1 D L3 PLUS220SMD (IXFV_S) Outline E E1 L2 A A1 E1 L 3X b c A2 D A3 L3 L L1 2X b e c A2 L4 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 2X e Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 b c D D1 E E1 e L L1 L2 L3 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 IXFH 26N50P Fig. 1. Output Characteristics @ 25C 30 27 24 21 VGS = 10V 7V 6V 50 60 VGS = 10V IXFV 26N50P IXFV 26N50PS Fig. 2. Extended Output Characteristics @ 25C 7V I D - Amperes 18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 5V 4.5V 5.5V I D - Amperes 40 6V 30 20 5.5V 10 5V 0 0 3 6 9 12 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125C 30 27 24 VGS = 10V 7V 6V 5.5V 3.1 2.8 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 21 18 15 12 9 6 3 0 0 2 4 6 8 10 12 R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 13A I D = 26A 5V 4.5V 14 16 18 20 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.4 3 VGS = 10V TJ = 125C 27 24 21 2.6 2.2 1.8 1.4 6 1 0.6 0 5 10 15 20 25 30 35 40 45 50 55 60 TJ = 25C 3 0 -50 -25 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature R D S ( o n ) - Normalized I D - Amperes 18 15 12 9 0 25 50 75 100 125 150 I D - Amperes TC - Degrees Centigrade (c) 2005 IXYS All rights reserved IXFH 26N50P Fig. 7. Input Adm ittance 40 35 30 55 50 45 40 TJ = -40C 25C 125C IXFV 26N50P IXFV 26N50PS Fig. 8. Transconductance g f s - Siemens I D - Amperes 25 20 15 TJ = 125C 10 5 0 3.5 4 4.5 5 5.5 6 6.5 25C -40C 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 70 60 50 10 9 8 VDS = 250V I D = 13A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 7 VG S - Volts TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1 40 30 20 10 0 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 V S D - Volts Fig. 11. Capacitance 10000 100 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area R DS(on) Limit Capacitance - picoFarads C iss I D - Amperes 1000 25s 100s 1ms 10ms 10 C oss 100 TJ = 150C f = 1MHz 10 0 5 10 15 20 25 30 35 40 C rss 1 10 TC = 25C DC 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts IXFH 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maxim um Transient Thermal Resistance 1.00 R ( t h ) J C - C / W 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2005 IXYS All rights reserved |
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