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| FDS9934C February 2004 FDS9934C Complementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features * Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V RDS(ON) = 43 m @ VGS = 2.5 V. * Q2: -5 A, -20 V, RDS(ON) = 55 m @ VGS = -4.5 V RDS(ON) = 90 m @ VGS = -2.5 V D1 D D2 D D1 D DD2 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings Q1 20 10 6.5 20 2 1.6 1 0.9 -55 to +150 Units V V A W Q2 -20 12 -5 -30 TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS9934C Device FDS9934C Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2004 Fairchild Semiconductor Corporation FDS9934C Rev C(W) FDS9934C Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Test Conditions VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 16V, VGS = 0 V VDS = -16V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A ID = 250 uA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.4 A VGS = 4.5 V, ID =6.5A, TJ=125C VGS = -4.5 V, ID = -3.2 A VGS = -2.5 V, ID = -1.0 A VGS = -4.5 V,ID = -3.2 A, TJ=125C VGS = 4.5V, VDS = 5 V VGS = -4.5 V, VDS = - 5 V VDS = -5 V, ID = 6.5 A VDS = 5 V, ID = - 5.5 A Type Min Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 20 -20 Typ Max Units V 14 -14 1 -1 100 100 mV/C A nA Off Characteristics VGS(th) VGS(th) ? TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 0.6 -0.8 Q2 1 -1 -3 3 25 35 35 43 64 55 1.5 -1.5 V mV/C 30 43 50 55 90 76 m m ID(on) gFS On-State Drain Current Forward Transcoductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 15 -16 22 14 650 955 150 215 85 115 1.4 4.9 A S S pF pF pF Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Q1 VDS = 10V, VGS = 0 V, f = 1.0 MHz Output Capacitance Q2 Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz Gate Resistance VGS = 15 mV, f = 1.0 MHz FDS9934C Rev C(W) FDS9934C Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Q2 VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6 Q1 VDS = 10 V, ID = 3 A, VGS = 4.5V Q2 VDS = -6 V, ID = -3.2 A,VGS = -4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 16 9 9 15 25 4 9 6.2 8.7 1.2 2.1 1.7 2.1 16 29 17 18 26 41 9 19 9 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, VGS = 0 V, Q1 IF = 6.5 A, Q2 IF = -3.2 A, IS = 1.3 A IS = -2.0 A (Note 2) (Note 2) diF/dt = 100 A/s diF/dt = 100 A/s 0.73 -0.8 15 20 5 7 1.3 -1.3 1.2 -1.2 A V nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125/W when mounted on a .02 in2 pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS9934C Rev C(W) FDS9934C Typical Characteristics: Q1 (N-Channel) 20 2.4 VGS = 4.5V 2.5V VGS = 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 2.5V 3.0V 3.5V 4.0V 4.5V 16 ID, DRAIN CURRENT (A) 3.5 12 3.0V 8 2.0V 4 0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 5 10 ID, DIRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.11 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 6.5A VGS = 4.5V ID = 3.25A 0.09 1.4 1.2 0.07 TA = 125 C 0.05 o 1 0.8 0.03 TA = 25oC 0.01 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C 125 C ID, DRAIN CURRENT (A) 15 o IS, REVERSE DRAIN CURRENT (A) VDS = 5V o VGS = 0V 10 TA = 125 C 1 25oC 0.1 -55 C 0.01 0.001 0.0001 o o 25oC 10 5 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9934C Rev C(W) FDS9934C Typical Characteristics: Q1 (N-Channel) 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 3 A 4 VDS = 5V 10V 3 15V 1000 f = 1 MHz VGS = 0 V 800 CAPACITANCE (pF) 600 Ciss 400 2 Coss 200 1 Crss 0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC) 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 100s 1ms 10ms 100ms 1s 10s DC 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 1 VGS = 4.5V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.01 0.1 20 0.1 10 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS9934C Rev C(W) FDS9934C Typical Characteristics: Q2 (P-Channel) 30 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V V -3.0V VGS=-2.5V 1.6 -ID, DRAIN CURRENT (A) 20 -4.0V V 1.4 -3.0V 1.2 -2.5V 10 -3.5V -4.0V -4.5V -2.0V 1 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0.8 0 6 12 18 -ID, DRAIN CURRENT (A) 24 30 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.5A RDS(ON), ON-RESISTANCE (OHM) 1.3 ID = -5A VGS = -4.5V 0.12 1.2 0.1 1.1 0.08 TA = 125 C 0.06 o 1 TA = 25oC 0.04 0.9 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.02 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 13. On-Resistance Variation with Temperature. 30 -IS, REVERSE DRAIN CURRENT (A) Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V 25 -ID, DRAIN CURRENT (A) TA = -55oC 125 C 25oC o VGS =0V 10 20 1 15 0.1 TA = 125 C 25oC -55oC o 10 0.01 5 0.001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 0.0001 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9934C Rev C(W) FDS9934C Typical Characteristics: Q2 (P-Channel) 5 -VGS, GATE-SOURCE VOLTAGE (V) 1600 ID = -5A 4 VDS = -4V -8V CAPACITANCE (pF) 1200 f = 1 MHz VGS = 0 V -6V 3 Ciss 800 2 Coss 400 1 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 1s 10s 1 DC VGS = -4.5V SINGLE PULSE RJA = 135oC/W TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 o Figure 18. Capacitance Characteristics. 50 100s 1ms 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W o 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9934C Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7 This datasheet has been download from: www..com Datasheets for electronics components. |
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