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PM5075J
Silicon N-Channel Power MOS FET Module
Application
High Speed Power Switching
Features
* * * * * * * * Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc.
PM5075J
Outline
Absolute Maximum Ratings (Ta = 25C) (Per FET chip)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1. Value at Ta = 25C 2. Base to terminals AC minute Symbol V(BR)DSS V(BR)GSS ID I D(peak) I DR I DR(peak) Pch* Tch Tstg Viso*
2 1
Rating 500 30 75 180 75 180 300 150 -45 to +125 2000
Unit V V A A A A W C C Vrms
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PM5075J
Electrical Characteristics (Ta = 25C) (Per FET chip)
Item Drain to source breakdown voltage Gate to source leak current Gate to source breakdown voltage Drain leak current Gate to source threshold voltage Drain to source saturation voltage Static drain-source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Symbol V(BR)DSS I GSS V(BR)GSS I DSS VGS(th) VDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 500 -- 30 -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.7 0.10 45 9600 2300 330 100 310 550 135 1.8 130 Max -- 10 -- 500 3.0 4.44 0.12 -- -- -- -- -- -- -- -- -- -- V ns I F = 75 A, VGS = 0 V I F = 75 A, VGS = 0 V di/dt = 100 A/s ns I D = 37 A, VGS = 10 V Rg = 50 RL = 1 Unit V A V A V V S pF Test Condition I D = 10 mA, VGS = 0 V VGS = 25 V, VDS = 0 V I G = 100 A, VDS = 0 V VDS = 400 V, VGS = 0 V I D = 1 mA, VDS = 10 V I D = 37 A, VGS = 10 V*1 I D = 37 A, VGS = 10 V*1 I D = 37 A, VDS = 10 V*1 VDS = 10 V, VGS = 0 V f = 1 MHz
Mechanical Characteristics
Item Fixing strength Symbol -- -- Weight -- Condition Mounting into main-terminal with M4 screw Mounting into heat sink with M5 screw Typical value Rating 1.45 to 1.95 1.95 to 2.9 200 Unit N-m N-m g
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PM5075J
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Package Dimensions
Unit: mm
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PM5075J
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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