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BLW87
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW87 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B .112 x 45 A O.125 NOM. FULL R J .125
FEATURES:
* Common Emitter * PG = 10 dB at 25 W/175 MHz * OmnigoldTM Metalization System
E B
C D F E
C E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.5 C/W
DIM A B C D E F G H I J
I GH
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG C IC = 50 mA IC = 15 mA IE = 5.0 mA VCB = 15 V VCE = 5.0 V
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18 36 4.0 5.0
UNITS
V V V mA --pF dB %
IC = 250 mA f = 1.0 MHz POUT = 25 W f = 175 MHz
20
--110
VCB = 12.5 V VCE = 12.5 V
10 60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
BLW87 ERROR! REFERENCE SOURCE NOT FOUND.
IMPEDANCE DATA
FREQ 160 MHz PIN = 3.0 W VCE = 12.5 V ZIN () 1.0 + j0.4 ZCL () 2.3 + j0.1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
2/2

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