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| BLV2N60 Datasheet BLV2N60 (OUTLINE) BLV2N60 , 600V 2.4A N VDMOS, . FEATURES) * 2.4A, 600V, RDS(ON)=4.4 @ VGS=10V * * * (APPLICATIONS) PIN CONFIGURATION 1 2 3 G D S (ABSOLUTE MAXIMUM RATING) TC=25C VDSS VGSS ID IDM Eas (Note 1) (Note2) 600 + 30 2.4 9.6 140 -55 to +150 64 V V A A mJ o Tj, TSDG PD Power Dissipation for Dual Operation C W Rth j-c Rth j-a Thermal Resistance, Junction to Case Max. Thermal Resistance, Junction to Ambient Max. 2.0 62.5 K/W K/W http://www.belling.com.cn -1Total 2 Pages 8/24/2006 Wrote by 1900 BLV2N60 Datasheet ELECTRICAL CHARACTERISTICS TA=25oC BVDSS BVDSS /TJ V V/oC 10 100 +/100 uA uA nA IDSS I GSS 600 VGS=0V,ID=250u A ID=250uA, Reference to 25 oC 0.4 VDS=600V,VGS=0V VDS=480V,Tc=125o C VGS=+/-20V,VDS=0V V GS(th) R DS(ON) (note3) Gfs (note3) VDS=VGS,ID=250uA VGS=10V,ID=1.2A VDS=50V, ID=1.2A 2 2.5* 4 4.4 V S Ciss Coss Crss t on tr t off tf Qg Qgs Qgd VDS=25VVGS=0V f = 1MHz 360 36 8 pF pF pF VDD=300V, ID=2.4A RG=25, note3 12* 21* 30* 24* ns ns ns ns nC nC nC VDD=480V, ID=2.4A Vgs=10V, note3 13* 2* 5* Note (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Eas L=45mH, Ias=2.4AVdd=50VRg=25staring Tj=25C (3) Pulse width 300 us; duty cycle 2% (4) *, http://www.belling.com.cn -2Total 2 Pages 8/24/2006 Wrote by 1900 |
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