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FDS7288N3
February 2004
FDS7288N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
Features
* 20.5 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V RDS(ON) = 5.6 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * Low Qg and Rg for fast switching * SO-8 FLMP for enhanced thermal performance in an industry-standard package outline.
Applications
* Secondary side Synchronous rectifier * Synchronous Buck VRM and POL Converters
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
20 60 3.0 1.5 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W C/W
Package Marking and Ordering Information
Device Marking FDS7288N3 Device FDS7288N3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS7288N3 Rev C1 (W)
FDS7288N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 20.5 A VGS = 4.5 V, ID = 18.5 A VGS = 10 V, ID = 20.5 A,TJ = 125C VDS = 10 V, ID = 20.5 A VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz
Min
30
Typ
Max Units
V
Off Characteristics
25 10 100 1 1.8 -5 3.8 4.6 5.2 106 3300 845 230 1.6 12 11 45 32 VDS = 15 V, ID = 20.5 A, VGS =10 V VDS = 15 V, ID = 20.5 A, VGS = 5 V 49 26 8.8 6.7 22 20 72 51 69 36 4.5 5.6 7.6 3 mV/C A nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
V mV/C m
gFS
S pF pF pF ns ns ns ns nC nC nC nC
Dynamic Characteristics Ciss Input Capacitance Coss Crss RG Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2)
Switching Characteristics td(on) Turn-On Delay Time tr td(off) tf Qg Qg Qgs Qgd IS VSD trr Qrr Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 20.5 A, Diode Reverse Recovery Time diF/dt = 100 A/s Diode Reverse Recovery Charge 2.5
(Note 2)
A V nS nC
0.70 36 25
1.2
FDS7288N3 Rev C1 (W)
FDS7288N3
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40C/W when mounted on a 1in2 pad of 2 oz copper
b)
85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS7288N3 Rev C1 (W)
FDS7288N3
Typical Characteristics
60
VGS =10V 6.0V
2.6 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
1
VGS = 3.0V
50 ID, DRAIN CURRENT (A)
4.0V 4.5V
40
30
3.0V
3.5V 4.0V 4.5V 5.0V 6.0V 10V
20
10
0 0 0.2
2.5V
0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20 30 40 ID, DRAIN CURRENT (A)
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.018
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 20.5A VGS = 10V
ID = 10.25A
RDS(ON), ON-RESISTANCE (OHM) 0.014
1.4
1.2
0.01
1
TA = 125oC
0.006
0.8
TA = 25 C
0.002
o
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation withTemperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
50 ID, DRAIN CURRENT (A)
10 1 0.1 0.01 0.001 0.0001
TA = 125 C
o
40
30
TA =125 C 25 C -55 C
o o
o
25 C
o
20
-55 C
o
10
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0
0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7288N3 Rev C1 (W)
FDS7288N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 20.5A 8 VDS = 10V CAPACITANCE (pF) 20V
4000 f = 1MHz VGS = 0 V 3000 Ciss
6
2000 Coss 1000 Crss 0
4
15V
2
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0
5
10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
100 ID, DRAIN CURRENT (A)
RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 85 C/W TA = 25oC
100s
40
SINGLE PULSE RJA = 85C/W TA = 25C
10
30
1
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.01
0.1
1 10 t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 85 C/W
0.1
0.1 0.05 0.02 0.01
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7288N3 Rev C1 (W)
FDS7288N3
Dimensional Outline and Pad Layout
FDS7288N3 Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM
POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I8

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