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| 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications * * * High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 2.90.2 1.90.2 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.95 0.95 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 1 2 3 Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t=10s) Total collector power dissipation (DC) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note.1) Tj Tstg Rating 50 50 30 6 3.0 5.0 0.3 1.00 0.625 150 -55 to 150 Unit V V V V A A W C C 2 0.70.05 1.Base 2.Emitter 3.Collector JEDEC JEITA TOSHIBA 00.1 23S1A Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 2004-07-01 0.160.05 0.15 Maximum Ratings (Ta = 25C) 0.40.1 2SC5976 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 50 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.3 A VCE = 2 V, IC = 1.0 A IC = 1.0 A, IB =33mA IC = 1.0 A, IB =33mA VCB = 10 V, IE = 0, f=1MHz See Figure 1. VCC 12V, RL = 12 IB1 = -IB2 = 33 mA Min 30 250 120 Typ. 18 40 320 25 ns Max 0.1 0.1 400 0.14 1.10 V V pF Unit A A V VCC 20 s IB1 IB2 IB2 Duty cycle < 1% IB1 RL Output Input Figure 1 Switching Time Test Circuit & Timing Chart MARKING Part No. (or abbreviation code) W Lot code (year) Dot: even year No dot: odd year W Lot code (month) 2 2004-07-01 2SC5976 IC - VCE 3.0 20 1000 15 10 hFE - IC Ta = 100C (A) 2.5 DC current gain hFE 8 2.0 6 1.5 4 1.0 IB = 2 mA Common emitter Ta = 25C Single nonrepetitive pulse 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC 25C -55C 100 0.5 Common emitter VCE = 2 V Single nonrepetitive pulse 10 0.01 0.001 0 0 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 1 VBE (sat) - IC 10 Common emitter = 30 Single nonrepetitive pulse Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) Common emitter = 30 Single nonrepetitive pulse 0.1 Ta = 100C -55C 1 Ta = -55C 100C 25C 25C 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC - VBE 3.0 Common emitter 0.8 VCE = 2 V 2.5 Single nonrepetitive pulse Pc - Ta (W) DC Operation Ta = 25C Mounted on an FR4 board glass epoxy, 2 1.6 mm thick, Cu area: 645 mm ) (A) PC Collector power dissipation 2.0 1.5 Ta = 100C 1.0 -55C 0.5 25C 0 0 0.6 Collector current IC 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.2 0 0 20 40 60 80 100 120 140 160 Base-emitter saturation voltage VBE (V) Ambient temperature Ta (C) 3 2004-07-01 2SC5976 rth - tw 1000 Transient thermal resistance rth(j-a) (C/W) 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C 2 Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 10 IC max (Pulsed)* 10 ms* 1 ms* 100 s* 10 s* Collector current IC (A) IC max (Continuous)* 100 ms* 10 s* DC operation Ta = 25C *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 1 VCEO max 100 Collector-emitter voltage VCE (V) 4 2004-07-01 2SC5976 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-01 |
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