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TN6726A / NZT6726
Discrete POWER & Signal Technologies
TN6726A
NZT6726
C
E C C
TO-226
BE
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
30 40 5.0 1.5 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6726A 1.0 8.0 50 125
Max
*NZT6726 1.0 8.0 125
2
Units
W mW/C C/W C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .
(c) 1997 Fairchild Semiconductor Corporation
TN6726A / NZT6726
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 30 40 5.0 0.1 0.1 V V V A A
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 100 mA, VCE = 1.0 V I C = 1.0 A, VCE = 1.0 V I C = 1.0 A, IB = 100 mA I C = 1.0 A, VCE = 1.0 V 60 50 250 0.5 1.2 V V
SMALL SIGNAL CHARACTERISTICS
hfe Ccb Small-Signal Current Gain Collector-Base Capacitance I C = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF
*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
DC Typical Characteristics
300 250
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
V CE = 5V
125 C
Collector-Emitter Saturation Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 0.01
- 40 C 125 C
= 10
200 150 100 50 0 0.01 IC
- 40 C 25 C
25 C
0.1 1 - COLLECTOR CURRENT (A)
2
0.1 1 I C - COLLECTOR CURRENT (A)
P
3
TN6726A / NZT6726
PNP General Purpose Amplifier
(continued)
DC Typical Characteristics
Base-Emitter Saturation Voltage vs Collector Current
1 = 10
(continued)
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter ON Voltage vs Collector Current
1
0.8
- 40 C 25 C 125 C
0.8
- 40 C 25 C 125 C
0.6
0.6
0.4
0.4 1 10 100 I C - COLLECTOR CURRENT (mA)
P 77
VCE = 5V
0.2
1000
1
10 100 I C - COLLECTOR CURRENT (mA)
P
1000
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100
V CB = 20V
10
1
0.1
25
50 75 100 125 TA - AMBIENT TEMPERATURE (C)
150
AC Typical Characteristics
Collector-Base Capacitance vs. Collector-Base Voltage Gain Bandwidth Product vs. Collector Current
TN6726A / NZT6726
PNP General Purpose Amplifier
(continued)
AC Typical Characteristics
(continued)
Safe Operating Area TO-226
POWER DISSIPATION vs AMBIENT TEMPERATURE
1 PD - POWER DISSIPATION (W)
0.75
TO-226 SOT-223
0.5
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150

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