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| TN6729A / NZT6729 Discrete POWER & Signal Technologies TN6729A NZT6729 C E C C TO-226 BE B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 5.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6729A 1.0 8.0 50 125 Max *NZT6729 1.0 8.0 125 Units W mW/C C/W C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 1997 Fairchild Semiconductor Corporation TN6729A / NZT6729 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 1.0 mA, IC = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 80 80 5.0 0.1 10 V V V A A ON CHARACTERISTICS* hFE DC Current Gain I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 500 mA, VCE = 1.0 V I C = 250 mA, IB = 10 mA I C = 250 mA, IB = 25 mA I C = 250 mA, VCE = 1.0 V 80 50 20 250 0.5 0.35 1.2 V V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS hfe Ccb Small-Signal Current Gain Collector-Base Capacitance IC = 200 mA, VCE = 5.0 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% Typical Characteristics VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 200 125 C Collector-Emitter Saturation Voltage vs Collector Current 2 1 = 10 V CE = 1.0 V 150 25 C - 40 C 125 C 100 25 C 0.1 50 - 40 C 0 0.01 0.02 0.05 0.1 0.5 I C - COLLECTOR CURRENT (mA) P9 1 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 79 1000 TN6729A / NZT6729 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) VBEON - BASE EMITTER ON VOLTAGE (V) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.8 - 40 C 25 C 125 C 0.6 125 C 0.6 0.4 0.4 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 C OBO - COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 VCB = 60V 10 Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1.0 MHz 30 1 20 0.1 10 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( C) P9 125 0 0 4 8 12 Pr79 16 20 24 28 V CB - COLLECTOR-BASE VOLTAGE (V) f T - GAIN BANDWIDTH PRODUCT (MHz) 250 V CE = 10V 200 150 100 50 0 I C - COLLECTOR CURRENT (A) Gain Bandwidth Product vs Collector Current Safe Operating Area TO-226 10 10 S * S* 1 DC 100 T DC *PULSED OPERATION T A = 25 C T CO 1.0 LL EC m TO s* RL EA AM D= BIE 25 NT C = 0.1 25 C LIMIT DETERMINED BY BV CEO 1 10 100 I C - COLLECTOR CURRENT (mA) P9 1000 0.01 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) Pr79 100 TN6729A / NZT6729 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 |
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