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| SI3911DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.145 @ VGS = -4.5 V -20 0.200 @ VGS = -2.5 V 0.300 @ VGS = -1.8 V ID (A) -2.2 -1.8 -1.5 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 S1 G2 G2 3 4 D2 2.85 mm D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C IDM IS -1.05 1.15 0.73 -55 to 150 Symbol VDS VGS 5 secs Steady State -20 "8 Unit V -2.2 ID -1.8 "8 -1.8 -1.5 A -0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71380 S-20275--Rev. B, 18-Mar-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 93 130 90 Maximum 110 150 90 Unit _C/W C/W 1 SI3911DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.2 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -1.8 A VGS = -1.8 V, ID = -1.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -2.2 A IS = -1.05 A, VGS = 0 V -5 0.115 0.163 0.240 5 -0.8 -1.1 0.145 0.200 0.300 S V W -0.45 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.05 A, di/dt = 100 A/ms VDD = -4 V, RL = 8 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -2.2 A 5 1 0.9 12 29 24 30 20 20 50 45 50 40 ns 7.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 10 Transfer Characteristics VGS = 4.5 thru 2.5 V 6 I D - Drain Current (A) I D - Drain Current (A) TC = -55_C 8 25_C 6 125_C 4 4 2V 2 1.5 V 2 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71380 S-20275--Rev. B, 18-Mar-02 SI3911DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.75 600 Vishay Siliconix Capacitance r DS(on)- On-Resistance ( W ) 0.60 C - Capacitance (pF) 500 Ciss 400 0.45 VGS = 1.8 V 0.30 VGS = 2.5 V 0.15 VGS = 4.5 V 300 200 Coss 100 Crss 0.00 0 2 4 ID - Drain Current (A) 6 8 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 2.2 A Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.2 A V GS - Gate-to-Source Voltage (V) r DS(on)- On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 4 1.6 1.4 3 1.2 2 1.0 1 0.8 0 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.4 I S - Source Current (A) TJ = 150_C 1 0.3 ID = 2.2 A 0.2 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71380 S-20275--Rev. B, 18-Mar-02 www.vishay.com 3 SI3911DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 8 Single Pulse Power (Junction-to-Ambient) 0.3 6 V GS(th) Variance (V) 0.2 ID = 250 mA 0.1 Power (W) 4 0.0 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71380 S-20275--Rev. B, 18-Mar-02 |
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