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| BLV108 N MOSFET : : N VDMOS VDSS VGSS ID PD Tj, TSDG (T=25 (T=25) 200 + 20 300 1 -55 to +150 V V mA W o Power Dissipation for Dual Operation C Rth j-a Thermal Resistance, Junction to Ambient o TA=25 C o 125 K/W 200 V BVDSS I DSS I GSS VGS = 0V , I D = 10uA VDS = 160V , VGS = 0V VGS = 20V , V DS = 0V 1 +100 0.4 1.8 5 uA nA V VGS (th ) R DS (on ) V DS = VGS , I D = 1mA VGS = 2.8V , I D = 100mA http://www.belling.com.cn -1Total 2 Pages 8/18/2006 BLV108 Ciss Coss Crss ton toff Turn-On Turn-Off VDS=25VVGS=0V f = 1MHz 120 30 15 6 49 10 60 pF pF pF ns ns VDD=50V, ID=250mA VGS=0 to 10V http://www.belling.com.cn -2Total 2 Pages 8/18/2006 |
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