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| Si3552DV New Product Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.105 @ VGS = 10 V 0.175 @ VGS = 4.5 V ID (A) "2.5 "2.0 "1.8 "1.2 P-Channel -30 0.200 @ VGS = -10 V 0.360 @ VGS = -4.5 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "2.5 "2.0 "8 1.05 1.15 P-Channel -30 "20 "1.8 "1.2 "7 -1.05 Unit V A W 0.73 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70971 S-61831--Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit _C/W 2-1 Si3552DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = -24 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 2.5 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = -1.8 A VGS = 4.5 V, ID = 2.0 A VGS = -4.5 V, ID = -1.2 A Forward Transconductancea gfs VDS = 10 V, ID = 2.5 A VDS = -15 V, ID = -1.8 A IS = 1.05 A, VGS = 0 V IS = -1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 A -5 0.085 0.165 0.140 0.298 4.3 S 2.4 0.81 -0.83 1.10 V -1.10 0.105 0.200 0.175 0.360 W 1.0 V -1.0 "100 "100 1 -1 5 -5 mA A nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea VSD Dynamicb N-Ch Total Gate Charge Qg N-Channel N Ch Channel l VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = -15 V VGS = -5 V ID = -1.8 A 15 V, 5 V, 18 Gate-Drain Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Time td(on) N Ch l N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse R R Recovery Time Ti tf IF = 1.05 A, di/dt = 100 A/ms IF = -1.05 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 2.1 2.4 0.7 nC C 0.9 0.7 0.8 7 8 9 12 13 12 5 7 35 30 11 12 14 18 20 ns 18 8 11 60 60 3.2 3.6 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70971 S-61831--Rev. A, 23-Aug-99 Si3552DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 TC = -55_C 25_C Vishay Siliconix N-CHANNEL Transfer Characteristics 6 4V 6 125_C 4 4 2 2V 0 0 1 2 3 4 5 3V 2 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 300 Capacitance r DS(on)- On-Resistance ( W ) 0.20 C - Capacitance (pF) 250 Ciss 0.15 VGS = 4.5 V 200 VGS = 10 V 0.10 150 100 Coss 50 Crss 0 5 10 15 20 25 30 0.05 0 0 1 2 3 4 5 6 7 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 1.8 A VGS = 10 V ID = 2.5 A 6 4 2 0 0 1 2 3 4 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70971 S-61831--Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si3552DV Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.40 ID = 2 A r DS(on) - On-Resistance ( W ) 0.32 ID = 2.5 A 0.24 I S - Source Current (A) TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C 1 0.16 TJ = 25_C 0.08 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 6 V GS(th) Variance (V) -0.0 Power (W) 8 Single Pulse Power (Junction-to-Ambient) 0.2 -0.2 4 -0.4 2 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70971 S-61831--Rev. A, 23-Aug-99 Si3552DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 7 V 8 6 I D - Drain Current (A) 5V 6 I D - Drain Current (A) 25_C 6V 8 P-CHANNEL Transfer Characteristics TC = -55_C 4 125_C 4 4V 2 2V 0 0 1 2 3 4 5 3V 2 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 300 Capacitance 0.5 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 240 Ciss 0.4 VGS = 4.5 V 180 0.3 VGS = 10 V 120 Coss 60 Crss 0.2 0.1 0 0 1 2 3 4 5 6 7 0 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 70971 S-61831--Rev. A, 23-Aug-99 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-5 Si3552DV Vishay Siliconix New Product P-CHANNEL 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 VDS = 15 V ID = 1.8 A Gate Charge On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage ID = 1.8 A 0.5 r DS(on)- On-Resistance ( W ) ID = 1 A 0.4 I S - Source Current (A) TJ = 150_C 1 0.3 TJ = 25_C 0.2 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 8 Single Pulse Power (Junction-to-Ambient) 0.4 6 V GS(th) Variance (V) 0.2 ID = 250 mA Power (W) 4 0.0 2 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70971 S-61831--Rev. A, 23-Aug-99 Si3552DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix P-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70971 S-61831--Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 2-7 |
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