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| SI6436DQ N-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.045 @ VGS = 10 V 0.070 @ VGS = 4.5 V ID (A) "4.4 "3.5 D TSSOP-8 D S S G 1 2 3 4 D SI6436DQ 8 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View S* N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "4.4 "3.5 "30 1.7 1.5 1.0 -55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70169. A SPICE Model data sheet is available for this product (FaxBack document #70535). Symbol RthJA Limit 83 Unit _C/W Siliconix S-49534--Rev. E, 06-Oct-97 7 SI6436DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On State Drain Source On-State Resistancea Forward Transconductance a Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4.4 A VGS = 4.5 V, ID = 3.0 A VDS = 15 V, ID = 4.4 A IS = 1.7 A, VGS = 0 V 20 0.034 0.052 8 0.75 1.2 0.045 0.070 1 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 4.4 A 13 1.7 3.7 12 10 25 10 120 30 25 30 50 160 ns 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 8 Siliconix S-49534--Rev. E, 06-Oct-97 SI6436DQ Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 40 VGS = 9, 8, 7 V 30 I D - Drain Current (A) 6V I D - Drain Current (A) 16 20 Transfer Characteristics 12 20 5V 8 TC = 125_C 4 -55_C 25_C 10 4V 3, 2, 1 V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.07 0.06 rDS(on) - On-Resistance ( W ) 0.05 0.04 0.03 0.02 0.01 0 0 3 6 9 12 15 ID - Drain Current (A) 0 0 5 VGS = 10 V VGS = 4.5 V C - Capacitance (pF) 1200 1600 Capacitance Coss 800 400 Crss Ciss 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 10 VGS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.4 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.4 A rDS(on) - On-Resistance ( W ) (Normalized) 0 2 4 6 8 10 12 8 1.5 6 1.0 4 0.5 2 0 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Siliconix S-49534--Rev. E, 06-Oct-97 9 SI6436DQ Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 30 20 I S - Source Current (A) TJ = 150_C 10 rDS(on) - On-Resistance ( W ) 0.5 0.4 0.3 0.2 ID = 4.4 A 0.1 0 0.62 0.72 0.82 0.92 1.02 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.6 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 1 0.52 0.3 0.2 0.1 VGS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -50 Threshold Voltage 50 Single Pulse Power 40 ID = 250 mA Power (W) -25 0 25 50 75 100 125 150 30 20 10 0 0.001 0.01 0.1 Time (sec) 1 10 100 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 10 Siliconix S-49534--Rev. E, 06-Oct-97 |
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