View AO6605_1109425.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO6605 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications). AO6605L is a Green Product ordering option. AO6605 and AO6605L are electrically identical.
Features
n-channel p-channel -20V VDS (V) = 20V ID = 1.9A (VGS = 4.5V) -2.5A RDS(ON) < 200m < 97m (VGS = 4.5V) < 270m < 130m (VGS = 2.5V) < 400m < 190m (VGS = 1.8V)
D1 TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2 G1 S1 G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -20 8 -2.5 -2.0 -15 1.15 0.73 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
8 1.7 1.4 15 1.15 0.73 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL
Typ 78 106 64
Max 110 150 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6605
N-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=1.9A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=1.6A VGS=1.8V, ID=1.3A gFS VSD IS Forward Transconductance VDS=5V, ID=1.9A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.5 5 165 230 225 325 2.8 0.88 1 0.4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.6 VGS=4.5V, VDS=10V, ID=1.9A 0.2 0.4 3.2 VGS=5V, VDS=10V, RL=5.3, RGEN=3 IF=1.9A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 16 4 2 125 200 280 270 400 0.55 Min 20 1 5 25 0.9 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=1.9A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6605
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 3.0V 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 500 VGS=1.8V Normalized On-Resistance 450 400 RDS(ON) (m) 350 300 250 200 150 100 0 1 2 3 4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 600 500 400 300 200 100 0 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=1.9A 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.5 1.0 1.5 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C VGS=2.5V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=1.3A 2.5V 1 VGS=2.0V 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 25C 8.0V 5.0V 4.0V ID (A) ID(A) 3 4 VDS=5V
2 125C
VGS=2.5V ID=1.6A
VGS=4.5V ID=1.9A
125C
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
AO6605
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=1.9A 200
Capacitance (pF)
150
Ciss
100
50
Coss
Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 1ms
20 100s 15 Power (W) 10s 10 5 DC 10 VDS (Volts) 100 0 0.001
TJ(Max)=150C TA=25C
ID (Amps)
10.0
1.0
10ms
1s 10s
0.1 0.1 1
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO6605
P-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3A 4 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 81 111 108 146 6 -0.78 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 15 6.1 VGS=-4.5V, VDS=-10V, ID=-2.5A 0.6 1.6 12 VGS=-4.5V, VDS=-10V, RL=3.9, RGEN=3 IF=-2.5A, dI/dt=100A/s 15 49 27 22 16 26 19.5 7.5 700 97 135 130 190 -0.55 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. A: The value any JA is measured with the device mountedspecific2board board with 2oz. Copper, in is based on the t 10s thermal The value in of R given application depends on the user's on 1in FR-4 design. The current rating a still air environment with T A =25C. resistance rating. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal B: Repetitive rating, pulse width limited by junction temperature. resistance rating. B: Repetitive is the sum of width limitedimpedence from junction to lead R JL and lead to ambient. C. The R JA rating, pulse the thermal by junction temperature. C. The R JA is the sum of the thermal impedence from junction tousing R JL and lead duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained lead 80 s pulses, to ambient. D. The static characteristics in with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The E. These tests are performed Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed pulsethe device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single with rating. SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS I N LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6605
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -8V 10 -ID (A) -ID(A) -2.0V -3.0V -2.5V 4 6 VDS=-5V
5
2 VGS=-1.5V
125C 25C
0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5
0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2
200 VGS=-1.8V RDS(ON) (m) 150 VGS=-2.5V 100 Normalized On-Resistance
1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-2.5A ID=-2.5A VGS=-1.8V VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
50
200
RDS(ON) (m)
150 -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO6605
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-2.5A Capacitance (pF) 800 Ciss
600
400
200
Crss Coss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 1ms 0.1s 10ms 100s
20 10s Power (W) 15 10 5 0 0.001
TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

▲Up To Search▲

Price & Availability of AO6605

	To Download AO6605 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .