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| SI6552DQ Vishay Siliconix Dual N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.08 @ VGS = 4.5 V 0.11 @ VGS = 2.5 V 0.1 @ VGS = - 4.5 V ID (A) "2.8 "2.1 "2.5 "1.9 P-Channel P Channel - 12 0.18 @ VGS = - 2.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G2 G1 SI6552DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.0 1.0 0.64 - 55 to 150 W _C Symbol VDS VGS N-Channel 20 "8 "2.8 "2.3 "20 P-Channel - 12 Unit V "2.5 "2.0 A - 1.0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70175 S-03419--Rev. G, 03-Mar-03 www.vishay.com Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 SI6552DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = - 12 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = - 12 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V On-State On State Drain Currenta VDS = - 5 V, VGS = - 4.5 V ID( ) D(on) VDS = 5 V, VGS = 2.5 V VDS = - 5 V, VGS = - 2.5 V VGS = 4.5 V, ID = 2.8 A Drain-Source On-State Drain Source On State Resistancea VGS = - 4.5 V, ID = 2.5 A rDS( ) DS(on) VGS = 2.5 V, ID = 2.1 A VGS = - 2.5 V, ID = 1.9 A Forward Transconductancea VDS = 15 V, ID = 2.8 A gf fs VDS = - 9 V, ID = - 2.5 A IS = 1.0 A, VGS = 0 V VSD IS = - 1.0 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 12 7 1.2 - 1.2 V S 10 - 10 4 -4 0.08 0.1 0.11 0.18 W A N-Ch P-Ch 0.6 V - 0.6 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.8 A Gate-Source Gate Source Charge Qgs P-Channel VDS = - 6 V VGS = - 4.5 V ID = - 2.5 A V, 4 5 V, 25 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Turn On Delay Time td( ) d(on) N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P Channel P-Channel VDD = - 6 V, RL = 6 W V ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf N-Channel--IF = 1.0 A, di/dt = 100 A/ms trr P-Channel--IF = - 1.0 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 16 9 3 nC 2 6 3 37 21 66 35 56 43 57 22 26 35 60 40 100 70 100 80 100 40 70 70 ns 40 20 Gate-Drain Gate Drain Charge Qgd d Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70175 S-03419--Rev. G, 03-Mar-03 SI6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 8 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 25_C 12 20 TC = - 55_C 125_C N-CHANNEL Transfer Characteristics 12 2V 8 8 4 1V 0 0 2 4 6 8 10 4 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance r DS(on) - On-Resistance ( ) 1200 C - Capacitance (pF) 0.15 900 0.10 VGS = 2.5 V 600 Ciss 0.05 VGS = 4.5 V 300 Crss 0.00 0 2 4 6 8 10 0 0 2 4 6 8 Coss 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 VDS = 10 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( ) (Normalized) 4 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V IDS = 2.8 A 3 1.2 2 0.8 1 0.4 0 0 4 8 12 16 20 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70175 S-03419--Rev. G, 03-Mar-03 www.vishay.com 2-3 SI6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 20 0.090 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( ) 0.100 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.080 0.070 TJ = 25_C 0.060 ID = 2.8 A 0.050 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.040 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 25 Single Pulse Power 20 0.5 VGS(th) Variance (V) 15 0.0 ID = 250 A Power (W) 10 - 0.5 5 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 Single Pulse 0.01 10 -4 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70175 S-03419--Rev. G, 03-Mar-03 SI6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 8, 7, 6, 5, 4 V 16 I D - Drain Current (A) 8 I D - Drain Current (A) 10 P-CHANNEL Transfer Characteristics 3V 12 6 8 2V 4 4 2 TC = 125_C 25_C - 55_C 0 0 2 4 6 8 10 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 1500 Capacitance r DS(on) - On-Resistance ( ) 0.20 C - Capacitance (pF) 1200 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 900 Ciss 600 Coss 300 Crss 0.05 0.00 0 2 4 6 8 10 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 VGS = 4.5 V ID = 2.5 A V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( ) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.5 A 4 2 0 0 3 6 9 12 15 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70175 S-03419--Rev. G, 03-Mar-03 www.vishay.com 2-5 SI6552DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( ) 0.16 0.12 ID = 2.5 A 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 25 Single Pulse Power 20 0.5 VGS(th) Variance (V) ID = 250 A Power (W) 15 0.0 10 - 0.5 5 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-6 Document Number: 70175 S-03419--Rev. G, 03-Mar-03 |
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