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| BFR949T NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 2 1 VPS05996 Marking RKs 1=B Pin Configuration 2=E 3=C Package SC75 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 70 7 250 150 -65 ... 150 -65 ... 150 Unit V mA mW C TS 75C 1) 300 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-24-2001 BFR949T Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Base-emitter forward voltage IE = 25mA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 A ICBO 100 nA VBEF 1.05 V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 Oct-24-2001 BFR949T Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance VCB = 10 V, f = 1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1MHz Noise figure IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F 7 - Values typ. 9 0.31 0.2 0.6 max. 0.4 - Unit GHz pF dB 1 1.5 2.5 - Gms - 20 - Gma - 14 - |S21e|2 13 16 11 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-24-2001 BFR949T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = . 4.36 30 1.998 41.889 1.569 0.823 291 8.77 1.336 1.048 1.39 0 - fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 120 0.152 33.322 0.063 20.766 0.101 0.586 0.00894 0 0.334 0 0.5 0.924 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.085 1.86 1.095 3.68 72.2 0.849 0.456 0.198 459 0.217 0.75 1.11 300 pA pA A V V eV K V deg fF - fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B L3 C L1 = L2 = L3 = C' 0.762 0.706 0.382 62 84 180 7 40 48 nH nH nH fF fF fF fF fF fF B' Transistor Chip E' C1 = C2 = C3 = C4 = C5 = C6 = C6 C2 L1 C3 C5 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Oct-24-2001 BFR949T Total power dissipation Ptot = f (TS ) 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp ) 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Oct-24-2001 BFR949T Collector-base capacitance Ccb = f (VCB ) Transition frequency fT = f (IC ) VCE = Parameter f = 1MHz 0.6 10 10V 8V pF GHz Ccb 0.4 fT 6 5V 0.3 4 0.2 3V 2V 1V 2 0.1 0.7V 0 0 5 10 15 V 25 0 0 5 10 15 20 25 30 35 mA 45 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 10V 8V Power Gain Gma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 16 10V 8V dB 5V dB 5V 3V G 16 G 3V 2V 2V 8 13 1V 1V 4 0.7V 10 0.7V 7 0 5 10 15 20 25 30 35 mA 45 0 0 5 10 15 20 25 30 35 mA 45 IC IC 6 Oct-24-2001 BFR949T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 25 IC=10mA 0.9GHz dB 0.9GHz 1.8GHz G 15 1.8GHz 10 5 0 0 3 6 V 12 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21 |2 = f(f) VCE = Parameter 30 IC=10mA dB IC =10mA 35 30 |S21|2 10V 5V 1V 20 G 25 15 20 15 10 5 0 0 10 5 10V 5V 1V 1 2 3 4 5 GHz 7 0 0 1 2 3 4 5 GHz 7 f f 7 Oct-24-2001 |
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