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| AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS & Sony 259 specifications). AO4427L is a Green Product ordering option. AO4427 and AO4427L are electrically identical Features VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12m (VGS = -20V) RDS(ON) < 14m (VGS = -10V) ESD Rating: 2KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 25 -12.5 -10.5 -60 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 28 54 21 Max 40 75 30 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4427 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-12.5A TJ=125C VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A -1.7 -60 9.4 12.2 11.5 32 24 -1 -4.2 2330 480 320 6.8 41 10 12 12.8 10.3 49.5 29 28 20 2900 12 15 14 -2.5 Min -30 -1 -5 1 -3 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns 35 ns nC Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance VDS=-5V, ID=-12.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12.5A 10 52 VGS=-10V, VDS=-15V, RL=1.2, RGEN=3 IF=-12.5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -6V -5V 20 25 VDS=-5V 20 -ID (A) -ID(A) -4.5V 15 125C 10 10 VGS=-4V 5 25C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 1 1.5 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 5 12 1.6 Normalized On-Resistance 11 RDS(ON) (m) VGS=-10V 1.4 VGS=-10V ID=-10A VGS=-10V, VDS=-15V, 10 ID=-12.5A VGS=-20V ID=-12.5A 1 1.2 9 VGS=-20V 8 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 ID=-12.5A 40 RDS(ON) (m) 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-03 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 0 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. -IS (A) 125C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 125C AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=-15V ID=-12.5A Capacitance (pF) 2500 2000 1500 Coss 1000 500 0 0 5 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 45 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 -VGS (Volts) 6 4 2 0 100.0 RDS(ON) limited 10.0 -ID (Amps) 100s 1ms Power (W) 10s 40 TJ(Max)=150C TA=25C 30 VGS=-10V, VDS=-15V, 10ms 0.1s ID=-12.5A 20 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1s 10s DC 1 10 100 10 0 0.001 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 T Alpha & Omega Semiconductor, Ltd. |
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