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2N3819
Vishay Siliconix
N-Channel JFET
PRODUCT SUMMARY
VGS(off) (V)
v -8
V(BR)GSS Min (V)
-25
gfs Min (mS)
2
IDSS Min (mA)
2
FEATURES
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.
TO-226AA (TO-92)
S 1
G
2
D
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70238 S-04028--Rev. D ,04-Jun-01 Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com
7-1
2N3819
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = -8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V -0.5 2 -25 -35 -3 10 -0.002 -0.002 -20 2 150 -2.5 0.7 -7.5 V pA W V -8 20 -2 -2 mA nA mA
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV Hz NH 6.5 mS mS
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 10 rDS(on) - Drain-Source On-Resistance ( ) gfs - Forward Transconductance (mS) 500 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
100
IDSS - Saturation Drain Current (mA)
16
IDSS
8
400
80
gos - Output Conductance (mS)
12
gfs
6
300
rDS gos
60
8
4
200
40
4
IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz
2
100
20
0 0 -2 -4 -6 -8 -10
0 VGS(off) - Gate-Source Cutoff Voltage (V)
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0
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7-2
Document Number: 70238 S-04028--Rev. D ,04-Jun-01
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100 nA
Gate Leakage Current
10 5 mA
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = -3 V VDS = 10 V f = 1 kHz
10 nA
gfs - Forward Transconductance (mS)
1 mA 0.1 mA
8 TA = -55_C 6 25_C 4 125_C 2
IG - Gate Leakage
1 nA
TA = 125_C IGSS @ 125_C 5 mA 1 mA 0.1 mA TA = 25_C IGSS @ 25_C
100 pA
10 pA
1 pA
0.1 pA 0 10 VDG - Drain-Gate Voltage (V) 20
0 0.1 1 ID - Drain Current (mA) 10
Output Characteristics
10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.2 V -1.4 V 0 2 4 6 8 10 12 15
Output Characteristics
VGS(off) = -3 V
VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V
0
0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
Transfer Characteristics
10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) TA = -55_C 6 25_C VDS = 10 V 8 10
Transfer Characteristics
VGS(off) = -3 V VDS = 10 V
TA = -55_C 25_C 6 125_C 4
4
125_C
2
2
0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V)
0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V)
Document Number: 70238 S-04028--Rev. D ,04-Jun-01
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7-3
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
10 VGS(off) = -2 V gfs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C 10 VGS(off) = -3 V VDS = 10 V f = 1 kHz
Transconductance vs. Gate-Source Voltgage
4
125_C
4 125_C 2
2
0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V)
0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300 rDS(on) - Drain-Source On-Resistance ( ) TA = -55_C 240 AV - Voltage Gain VGS(off) = -2 V 180 -3 V 120 80 100
Circuit Voltage Gain vs. Drain Current
g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID
60
VGS(off) = -2 V 40
60
20 -3 V
0 0.1 1 ID - Drain Current (mA) 10
0 0.1 1 ID - Drain Current (mA) 10
Common-Source Input Capacitance vs. Gate-Source Voltage
5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss - Input Capacitance (pF) 3.0
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
f = 1 MHz 2.4
3
VDS = 0 V
1.8
2
1.2
VDS = 0 V
1
VDS = 10 V
0.6
VDS = 10 V
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
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7-4
Document Number: 70238 S-04028--Rev. D ,04-Jun-01
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance
100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gis (mS) (mS) 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gfs
Forward Admittance
bis
-bis 1
1
0.1 100
200
500
1000
0.1 100
200
500
1000
f - Frequency (MHz)
f - Frequency (MHz)
Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10
Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
-brs
bos
1 (mS) (mS)
1 gos
-grs 0.1 0.1
0.01 100
200
500
1000
0.01 100
200
500
1000
f - Frequency (MHz)
f - Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
20 VGS(off) = -3 V Hz 16 VDS = 10 V gos - Output Conductance (mS) 16 20
Output Conductance vs. Drain Current
VGS(off) = -3 V VDS = 10 V f = 1 kHz
en - Noise Voltage nV /
TA = -55_C 12 25_C 8 125_C 4
12
8 ID = 5 mA 4 ID = IDSS 0 10 100 1k f - Frequency (Hz) 10 k 100 k
0 0.1
1 ID - Drain Current (mA)
10
Document Number: 70238 S-04028--Rev. D ,04-Jun-01
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7-5

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Price & Availability of 2N3819

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819 33C8258	NTE Electronics Inc	Transistor, Jfet, -30V, 15Ma, To-92-3; Gate Source Breakdown Voltage Max:-30V; Zero Gate Voltage Drain Current Max:15Ma; Gate Source Cutoff Voltage Max:-6V; No. Of Pins:3 Pin; Operating Temperature Max:-; Channel Type:N Channel Rohs Compliant: No \|Nte Electronics 2N3819		0

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2N3819 2368-2N3819-ND	NTE Electronics Inc	RF MOSFET JFET TO92-3	100: USD1.48 50: USD1.51 20: USD1.6 10: USD1.69 1: USD1.78	212
2N3819 2N3819CS-ND	Central Semiconductor Corp	RF MOSFET JFET 25V TO92-3	2500: USD0.53271	0

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2N3819 2N3819	Central Semiconductor Corp	Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3819)		0
2N3819 TRE PBFREE 2N3819 TRE PBFREE	Central Semiconductor Corp	Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N3819 TRE PBFREE)	200000: USD0.416 20000: USD0.4224 16000: USD0.4288 12000: USD0.44322 8000: USD0.453 4000: USD0.46278 2000: USD0.48767	0
2N3819 TRE TIN/LEAD 2N3819 TRE TIN/LEA	Central Semiconductor Corp	Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N3819 TRE TIN/LEA)	200000: USD0.4784 20000: USD0.48576 16000: USD0.49312 12000: USD0.50959 8000: USD0.52083 4000: USD0.53207 2000: USD0.56083	0
2N3819 APM TIN/LEAD 2N3819 APM TIN/LEA	Central Semiconductor Corp	Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N3819 APM TIN/LEA)	200000: USD0.4784 20000: USD0.48576 16000: USD0.49312 12000: USD0.50959 8000: USD0.52083 4000: USD0.53207 2000: USD0.56083	0
2N3819 APM PBFREE 2N3819 APM PBFREE	Central Semiconductor Corp	Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N3819 APM PBFREE)	200000: USD0.416 20000: USD0.4224 16000: USD0.4288 12000: USD0.44322 8000: USD0.453 4000: USD0.46278 2000: USD0.48767	0

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2N3819 APM PBFREE 610-2N3819APM	Central Semiconductor Corp	JFET Through-Hole JFET N Channel	1: USD1.12 10: USD0.916 100: USD0.713 500: USD0.604 1000: USD0.516 2000: USD0.438 10000: USD0.42	3742
2N3819 TRE PBFREE 610-2N3819TRE	Central Semiconductor Corp	JFET Through-Hole JFET N Channel	1: USD1.12 10: USD0.916 100: USD0.713 500: USD0.604 1000: USD0.507 2000: USD0.43 10000: USD0.42	1629
2N3819 TIN/LEAD 610-2N3819TIN	Central Semiconductor Corp	JFET Through-Hole JFET N Channel	1: USD1.29 10: USD1.06 100: USD0.82 500: USD0.695 1000: USD0.593 2500: USD0.504 10000: USD0.483	1332
2N3819 PBFREE 610-2N3819	Central Semiconductor Corp	JFET N-CH -25V 10mA BULK 25Vgs 360mW 8pF	1: USD1.12 10: USD0.916 100: USD0.713 500: USD0.604 1000: USD0.544	8676
2N3819 APM TIN/LEAD 610-2N3819APMTIN	Central Semiconductor Corp	JFET Through-Hole JFET N Channel	2000: USD0.504 10000: USD0.483	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819	NTE Electronics Inc	N-channel RF Amplifier Transistor - 2-20 mA - 25V - TO-92 Package.	5000: USD1.52 2500: USD1.56 1000: USD1.61 500: USD1.68 250: USD1.79 100: USD1.91 25: USD2.25 1: USD2.48	1

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2N3819	Fairchild Semiconductor Corporation			4
2N3819	National Semiconductor Corporation			8

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819 210622	Major Brands	Transistor 2N3819 JFET Small Signal N Channel	1: USD1.39 10: USD1.29 100: USD1.09	66

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2N3819	Fairchild Semiconductor Corporation	JFET Transistor, N-Channel, TO-92	2: USD5.625 1: USD6.75	3

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2N3819	Fairchild Semiconductor Corporation	N-CHANNEL RF AMPLIFIER RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92		672

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2N3819	Motorola Semiconductor Products	INSTOCK		1188

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819	UNKNOWN	IN STOCK SHIP TODAY	1000: USD0.5 100: USD0.58 1: USD0.77	5

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819	NTE Electronics Inc	N-channel RF Amplifier Transistor - 2-20 mA - 25V - TO-92 Package.	5000: USD1.52 2500: USD1.56 1000: USD1.61 500: USD1.68 250: USD1.79 100: USD1.91 25: USD2.25 1: USD2.48	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3819	National Semiconductor Corporation			10
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2N3819-E3	Vishay Siliconix			28

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