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| 2N6426 Discrete POWER & Signal Technologies 2N6426 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N6426 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N6426 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 30 V, IE = 0 VCE = 25 V, IB = 0 VEB = 10 V, IC = 0 40 40 12 50 1.0 50 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 10 mA VCE = 5.0 V, IC = 100 mA VCE = 5.0 V, IC = 500 mA IC = 50 mA, IB = 0.5 mA IC = 500 mA, I B = 0.5 mA IC = 500 mA, I B = 0.5 mA IC = 50 mA, VCE = 5.0 V 20,000 30,000 20,000 200,000 300,000 200,000 1.2 1.5 2.0 1.75 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe hie hoe NF Output Capacitance Input Capacitance Small-Signal Current Gain Input Impedance Output Admittance Noise Figure VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 1.0 V, IC = 0, f = 1.0 MHz I C = 10 mA, VCE = 5.0 V, f = 1.0 kHz I C = 10 mA, VCE = 5.0 V, f = 1.0 kHz I C = 1.0 mA, VCE = 5.0 V, Rs = 100 k, f = 10 kHz to 15.7 kHz 20,000 100 2,000 1,000 10 k mho dB 7.0 15 pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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