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| ON Semiconductort Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 12 500 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc 2N6426* 2N6427 *ON Semiconductor Preferred Device 1 mW mW/C Watts mW/C C 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W COLLECTOR 3 BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 10 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 -- -- -- -- -- -- -- -- -- -- -- -- 1.0 50 50 Vdc Vdc Vdc mAdc nAdc nAdc (c) Semiconductor Components Industries, LLC, 2001 1 February, 2001 - Rev.1 Publication Order Number: 2N6426/D 2N6426 2N6427 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE 2N6426 2N6427 2N6426 2N6427 2N6426 2N6427 VCE(sat) -- -- VBE(sat) VBE(on) -- -- 0.71 0.9 1.52 1.24 1.2 1.5 2.0 1.75 Vdc Vdc 20,000 10,000 30,000 20,000 20,000 14,000 -- -- -- -- -- -- 200,000 100,000 300,000 200,000 200,000 140,000 Vdc -- (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Current-Gain -- High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Admittance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2N6426 2N6427 hfe 2N6426 2N6427 |hfe| 2N6426 2N6427 hoe NF 1.5 1.3 -- -- 2.4 2.4 -- 3.0 -- -- 1000 10 mmhos dB 20,000 10,000 -- -- -- -- -- Cobo Cibo hie 100 50 -- -- 2000 1000 -- -- -- 5.4 10 7.0 15 pF pF k RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 2N6426 2N6427 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 500 200 100 10 A 50 100 A 20 10 5.0 10 20 50 100 200 IC = 1.0 mA 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) BANDWIDTH = 1.0 Hz en, NOISE VOLTAGE (nV) IC = 1.0 mA Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 A 14 12 10 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 2.0 5.0 IC = 1.0 mA 100 A BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 30 20 10 A 100 A 1.0 mA 10 1.0 2.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 2N6426 2N6427 SMALL-SIGNALCHARACTERISTICS 20 TJ = 25C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 C, CAPACITANCE (pF) 10 7.0 5.0 2.0 VCE = 5.0 V f = 100 MHz TJ = 25C Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 3.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0.1 0.2 IC = 10 mA 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN 25C -55C VCE = 5.0 V 500 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RV, TEMPERATURE COEFFICIENTS (mV/C) 1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 -1.0 -2.0 -3.0 *APPLIES FOR IC/IB hFE/3.0 *RqVC FOR VCE(sat) 25C TO 125C -55C TO 25C 25C TO 125C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -55C TO 25C VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. "On" Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 2N6426 2N6427 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 200 500 1.0 k 2.0 k 5.0 k 10 k RESISTANCE (NORMALIZED) Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C 1.0 ms 100 s FIGURE A tP PP PP 1.0 s t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 2N6426 2N6427 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 2N6426 2N6427 Notes http://onsemi.com 7 2N6426 2N6427 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6426/D |
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