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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 FEATURES TRANSISTOR (PNP) TO 92 Power dissipation PCM : 0.25 W Tamb=25ae(c) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J T stg: -55aeto +150ae 1.EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless Test otherwise MIN specified(c) TYP MAX UNIT V V V -1 -1 |I A |I A conditions Ic= -50|I IE=0 A IC= -0.1 mA , IB=0 IE= -50|I AIC=0 VCB=-150V, VEB= -4.5 V , IE=0 IC=0 -210 -210 -5 VCE=-3 V, IC= -5mA IC= -2mA, IB= -0.2mA VCE=-5V, IC= -2mA 56 270 -0.6 V MHz f T 30 Output capacitance Cob VCE=-10V,IE=0,f=1MHz 12 pF CLASSIFICATION OF hFE Rank Range N 56-120 P 82-180 Q 120-270 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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