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| VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 4700 7390 73x103 0.8 0.107 V A A A V mW Rectifier Diode 5SDD 50N5500 Doc. No. 5SYA1169-00 Sep. 04 * Patented free-floating silicon technology * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non - repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = 0...150C f = 5 Hz, tp = 10ms, Tj = 0...150C min typ Value 5000 5500 max 400 Unit V V Unit mA Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 150C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 90 kN, Ta = 25 C min 34.1 56 typ max 2.8 35.9 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 50N5500 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 150C, VR = 0 V tp = 10 ms, Tj = 150C, VR = 0 V 50 Hz, Half sine wave, TC = 90 C min typ max 4700 7390 73x10 27.5x10 80x10 26.7x10 3 Unit A A A A2s A A2s 6 3 6 Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 5000 A, Tj = 150C Tj = 150C IT = 2500...8000 A min typ max 1.34 0.8 0.107 Unit V V mW Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -10 A/s, VR = 200 V min typ max 18000 Unit mAs Recovery charge IFRM = 4000 A, Tj = 150C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1169-00 Sep. 04 page 2 of 6 5SDD 50N5500 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min 0 -40 min typ max 150 150 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 81...108 kN Anode-side cooled Fm = 81...108 kN Cathode-side cooled Fm = 81...108 kN Double-side cooled Fm = 81...108 kN Single-side cooled Fm = 81...108 kN typ max 5.7 11.4 11.4 1 2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = a R th i (1 - e-t/t i ) i =1 i Rth i(K/kW) ti(s) 1 3.709 0.8296 2 1.262 0.1107 3 0.475 0.0114 4 0.251 0.0024 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1169-00 Sep. 04 page 3 of 6 5SDD 50N5500 Max. on-state characteristic model: VF25 = A25 2.32x10 -6 Max. on-state characteristic model: VF150 = A150 -79.52x10-6 ATvj + BTvj x I F + CTvj x ln(I F +1) + DTvj x I F Valid for IF = 300 - 110000 A B25 C25 61.85x10 -6 ATvj + BTvj x I F + CTvj x ln(I F +1) + DTvj x I F Valid for IF = 300 - 110000 A B150 83.80x10-6 D25 -2.67x10-3 C150 99.41x10-3 D150 1.09x10-3 149.9x10 -3 Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1169-00 Sep. 04 page 4 of 6 5SDD 50N5500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Fig. 8 Recovery charge vs. decay rate of on-state current. Fig. 9 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1169-00 Sep. 04 page 5 of 6 5SDD 50N5500 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1169-00 Sep. 04 |
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