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| AOU401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU401 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications). AOU401L is a Green Product ordering option. AOU401 and AOU401L are electrically identical. TO-251 D Features VDS (V) = -60V ID = -26 A (VGS = -10V) RDS(ON) < 40 m (VGS = -10V) @ 20A RDS(ON) < 55 m (VGS = -4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 20 -26 -18 -60 -26 134 60 30 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 100 1.9 Max 125 2.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU401 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250uA, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A TJ=125C -1.2 -60 32 53 43 32 -0.73 -1 -30 2977 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 241 153 2 44 VGS=-10V, VDS=-30V, ID=-20A 22.2 9 10 12 VGS=-10V, VDS=-30V, RL=1.5, RGEN=3 IF=-20A, dI/dt=100A/s 14.5 38 15 40 59 50 2.4 54 28 3600 55 40 -1.9 Min -60 -0.003 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) 15 -3.5V 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 50 Normalized On-Resistance 45 VGS=-4.5V RDS(ON) (m) 40 35 30 25 20 0 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V 2 1.8 1.6 1.4 1.2 1 VGS=-4.5V ID=-20A VGS=-10V ID=-20A 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 10 25C 5 -4.5V -6V -5V -ID(A) 30 -4V 25 20 15 125C VDS=-5V 80 70 60 -IS (A) 125C ID=-20A 1.0E+01 1.0E+00 1.0E-01 RDS(ON) (m) 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 50 25C 40 30 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-30V ID=-20A Capacitance (pF) 4000 Ciss 8 -VGS (Volts) 3200 6 2400 4 1600 Coss Crss 2 800 0 0 5 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 50 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 10s 100s -ID (Amps) 10ms DC 1.0 TJ(Max)=175C, TA=25C Power (W) 10.0 RDS(ON) limited 1ms 1000 800 600 400 200 0 0.0001 TJ(Max)=175C TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.5C/W 1 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.001 0.01 0.1 1 Single Pulse 0.01 0.00001 0.0001 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -ID(A), Peak Avalanche Current 25 Power Dissipation (W) L ID tA = BV - VDD 70 60 50 40 30 20 10 20 15 TA=25C 10 0.00001 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 25 Current rating -ID(A) 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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