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| AOU456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU456 is Pb-free (meets ROHS & Sony 259 specifications). AOU456L is a Green Product ordering option. AOU456 and AOU456L are electrically identical. TO-251 D Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <7 m (VGS = 10V) RDS(ON) <10 m (VGS = 4.5V) 193 18 Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 20 50 50 150 30 45 50 25 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A Steady-State Steady-State Symbol RJA RJC Typ 41 2.1 Max 50 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU456 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 5.5 8 8.5 45 0.74 1 50 1850 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 472 275 0.86 31.7 VGS=10V, VDS=12.5V, ID=20A 15.7 5.8 8.2 7.5 VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 IF=20A, dI/dt=100A/s 14 30 11.5 30.9 20.3 37 1.2 38 19 2220 10 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC 7 m 1.74 Min 25 0.01 1 5 100 3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 6V 80 4.5V ID (A) 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5 10 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 4.0V 5V 10V 60 50 40 30 20 125C 25C VDS=5V 4.63 494 692 593 830 10 Normalized On-Resistance 1.8 193 18 8 RDS(ON) (m) VGS=4.5V 6 VGS=10V 1.6 VGS=10V, 20A 1.4 1.2 4 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 60 0.8 0 25 50 75 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 59 100 142 125 150 175 12 ID=20A 10 RDS(ON) (m) IS (A) 100 10 1 0.1 0.01 125C 0.001 0.0001 0.00001 25C 125C 8 6 25C 4 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance WITHOUT NOTICE. FUNCTIONS AND RELIABILITYvs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=12.5V ID=20A Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 500 Crss 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss 4.63 494 692 593 830 193 18 1000 TJ(Max)=175C, TA=25C 100 ID (Amps) RDS(ON) limited DC 10s Power (W) 100s 1ms 200 160 120 80 40 0 0.0001 TJ(Max)=175C TA=25C 10 1 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.001 0.01 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 59 0.1 142 1 10 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability Power Dissipation (W) 60 tA = L ID BV - VDD 50 40 30 4.63 20 10 0 0 25 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 50 175 TA=25C 494 692 593 830 193 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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