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| AP75T10S/P Advanced Power Electronics Corp. Simple Drive Requirement Lower On-resistance Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15m 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10P) are available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Units V V A A A W W/ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 20 72 45 260 138 1.11 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units /W /W AP75T10S/P Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=1mA 2 Min. 100 1 Min. - Typ. 0.09 52 69 12 39 12 75 220 250 5690 540 605 1.1 Typ. 51 74 Max. Units 15 21 3 10 100 100 110.4 9100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr VGS=10V, ID=30A VGS=4.5V, ID=16A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V VDS=80V ,VGS=0V VGS= 20V ID=30A VDS=80V VGS=4.5V VDS=50V ID=30A RG=10,VGS=10V RD=1.6 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=30A, VGS=0V IS=30A, VGS=0V dI/dt=100A/s Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 Source-Drain Diode Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP75T10S/P 250 120 T C = 25 C 200 o ID , Drain Current (A) ID , Drain Current (A) 10V 6.0 V 5.0V 4.5V 100 T C = 150 o C 80 10V 6.0V 5.0V 4.5V V G =3.0V 150 60 100 V G =3.0V 50 40 20 0 0 2 4 6 8 0 0 1 2 3 4 5 6 7 8 9 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 17 2.0 I D =16A 16 1.8 o T C =25 C 1.6 I D =30A V G =10V RDS(ON) (m ) 15 Normalized R DS(ON) 1.4 14 1.2 1.0 13 0.8 12 0.6 11 3 5 7 9 11 0.4 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 45 1.5 30 Normalized VGS(th) (V) IS(A) T j =150 o C 15 1 T j =25 o C 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75T10S/P f=1.0MHz 12 10000 VGS , Gate to Source Voltage (V) I D = 30 A 10 C iss 8 V DS = 50 V V DS = 64 V V DS = 80 V C (pF) 1000 6 4 C oss C rss 2 0 0 20 40 60 80 100 120 140 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 0.1 1ms 10 0.1 0.05 0.02 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 10ms T c =25 o C Single Pulse 1 100ms DC 10 100 1000 Single Pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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