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APTM20TAM16FP
Triple phase leg MOSFET Power Module
VBUS1 VBUS2 VBUS3
VDSS = 200V RDSon = 16m max @ Tj = 25C ID = 104A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
G5
S1 U
S3 V
S5 W
G2
G4
G6
S2 0/VBUS1
S4 0/VBUS2
S6 0/VBUS3
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 200 104 74 416 30 16 390 100 50 3000 Unit V
September, 2004 1-6 APTM20TAM16FP - Rev 0
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 S1 S2 G2 0/VBUS 2
G3 S3 S4 G4 0/VBUS 3
G5 S5 S6 G6
U
V
W
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
A V m W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTM20TAM16FP
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 200
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Max 250 1000 16 5 100
Unit V A m V nA
Tj = 25C Tj = 125C 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, R G = 5
Min
Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/s IS = - 104A VR = 133V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0.9 3.4
Max 104 74 1.3 5 230 450
Unit A V V/ns ns C
September, 2004 2-6 APTM20TAM16FP - Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 104A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM20TAM16FP
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.32 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
3-6
APTM20TAM16FP - Rev 0
September, 2004
APTM20TAM16FP
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
V GS=15V
350 300 ID, Drain Current (A) 250 200 150 100 50 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C T J=125C TJ=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 52A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
4-6
APTM20TAM16FP - Rev 0
September, 2004
25
50
75
100
125
150
APTM20TAM16FP
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 52A
100
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160
September, 2004 5-6 APTM20TAM16FP - Rev 0
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
APTM20TAM16FP
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 I D, Drain Current (A)
VDS=133V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140
V DS=133V R G=5 T J=125C L=100H
t d(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=5 T J=125C VDS=133V RG=5 T J=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A T J=125C L=100H
Eoff Eon
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ =150C
300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 I D, Drain Current (A)
100
TJ =25C 10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
September, 2004 6-6 APTM20TAM16FP - Rev 0
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com

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