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 DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416 Low-leakage diode
Product specification Supersedes data of 2002 Nov 19 2004 Jan 26
Philips Semiconductors
Product specification
Low-leakage diode
FEATURES * Plastic SMD package * Low leakage current: typ. 3 pA * Switching time: typ. 0.8 s * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. APPLICATIONS * Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. ORDERING INFORMATION TYPE NUMBER BAS416 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 2 leads
Marking code: D4. The marking bar indicates the cathode.
handbook, halfpage
BAS416
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
MAM406
Fig.1
Simplified outline (SOD323) (SC-76) and symbol.
VERSION SOD323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C see Fig.2 CONDITIONS - - - - MIN. MAX. 85 75 200 500 V V mA mA UNIT
2004 Jan 26
2
Philips Semiconductors
Product specification
Low-leakage diode
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time VR = 0; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 0.003 3 2 0.8 5 80 - 3 - - - - 0.9 1 1.1 1.25 CONDITIONS TYP.
BAS416
MAX. V V V V
UNIT
nA nA pF s
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Refer to SOD323 (SC-76) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 450 UNIT K/W
2004 Jan 26
3
Philips Semiconductors
Product specification
Low-leakage diode
GRAPHICAL DATA
MHC323
BAS416
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF (mA)
IF (mA) 200
(1) (2) (3)
200
100
100
0 0 100 Tamb (C) 200
0 0 0.4 0.8 1.2 V F (V) 1.6
Device mounted on an FR4 printed-circuit board.
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS416
10 2 handbook, halfpage IR (nA) 10
(1)
MLB754
handbook, halfpage
2
MBG526
Cd (pF)
1 1 10
1
10 2
(2)
10 3
0 0 50 100 150 200 T j ( oC) 0 5 10 15 VR (V) 20
VR = 75 V. (1) Maximum values. (2) Typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90%
tp t
R = 50 S V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05; Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2004 Jan 26
5
Philips Semiconductors
Product specification
Low-leakage diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAS416
SOD323
D
A
E
X
HD
v
M
A
Q
1
2
bp A
A1
(1)
c Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2
Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17
2004 Jan 26
6
Philips Semiconductors
Product specification
Low-leakage diode
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BAS416
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2004 Jan 26
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp8
Date of release: 2004
Jan 26
Document order number:
9397 750 12591


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Newark

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BAS416,115
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Nexperia Diode, Small Signal, 0.2A, 85V, Sod-323; Diode Configuration:Single; Repetitive Peak Reverse Voltage:85V; Average Forward Current:200Ma; Forward Voltage Max:1.25V; Reverse Recovery Time:3Μs; Forward Surge Current:4A; Product Range:- Rohs Compliant: Yes |Nexperia BAS416,115 1000: USD0.075
500: USD0.104
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Nexperia Diode, Small Signal, 0.2A, 85V, Sod-323; Diode Configuration:Single; Repetitive Peak Reverse Voltage:85V; Average Forward Current:200Ma; Forward Voltage Max:1.25V; Reverse Recovery Time:3Μs; Forward Surge Current:4A; Product Range:- Rohs Compliant: Yes |Nexperia BAS416,115 12000: USD0.051
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TTI

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TME

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BAS416Z 934057494145
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RFQ
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BAS416,115
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BAS416F 934057494135
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Avnet Asia

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BAS416115
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