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| BB833... Silicon Tuning Diodes Extended frequency range up to 2.5 GHz; spezial design for use in TV-sat indoor units High capacitance ratio 1 BB833 2 Type BB833 Package SOD323 Configuration single LS (nH) Marking 1.8 white X Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltageForward current Operating temperature range Storage temperature R 5k IF Top Tstg 20 -55 ... 150 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB833... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA 20 500 typ. - IR - pF 8.5 0.6 9.3 0.75 12.4 1.8 10 0.9 3 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT/CT 11 - VR = 1 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 Series resistance Capacitance matching1) rS BB833... Diode capacitance CT = f = 1MHz BB 833 (VR) Temperature coefficient of the diode 12 CT pF 10 EHD07121 10 -3 1/C TCc 8 6 10 -4 4 2 0 10 0 10 1 V VR 10 2 10 -5 -1 10 10 0 3 capacitance TCc = (VR ) 10 1 V 10 2 VR Nov-07-2002 |
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