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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP= 1ms Tc= 60C Tc= 25C tP= 1ms, Tc= 60C VCES IC,nom. IC ICRM 600 150 180 300 V A A A Tc= 25C, Transistor Ptot 595 W VGES +/- 20V V IF 150 A IFRM 300 A VR= 0V, tp= 10ms, Tvj= 125C I2t 2.300 A2s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC= 150A, VGE= 15V, Tvj= 25C IC= 150A, VGE= 15V, Tvj= 125C IC= 3,0mA, VCE= VGE, Tvj= 25C VCE sat min. VGE(th) 4,5 typ. 1,95 2,20 5,5 max. 2,45 6,5 V V V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cies - 6,5 - nF f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 600V, VGE= 0V, Tvj= 125C VCE= 0V, VGE= 20V, Tvj= 25C Cres - 0,6 1 1 - 500 400 nF A mA nA ICES IGES - prepared by: Andreas Vetter approved by: Michael Hornkamp date of publication: 2000-04-26 revision: 1 1 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Charakteristische Werte / Characteristic values Transistor / Transistor IC= 150A, VCC= 300V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 150A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 150A, VCC= 300V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 150A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C IC= 150A, VCC= 300V, VGE= 15V RG= 1,5, Tvj= 125C, L = 15nH IC= 150A, VCC= 300V, VGE= 15V RG= 1,5, Tvj= 125C, L = 15nH tP 10sec, VGE 15V Tvj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Eon tf 25 35 2,3 ns ns mJ td,off 200 225 ns ns tr 28 30 ns ns td,on 115 125 ns ns min. typ. max. Eoff - 4,6 - mJ ISC - 675 - A LCE - 40 - nH RCC'+EE' - 1,0 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF= 150A, VGE= 0V, Tvj= 25C IF= 150A, VGE= 0V, Tvj= 125C IF= 150A, -diF/dt= 5600A/sec Ruckstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 150A, -diF/dt= 5600A/sec Sperrverzogerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 150A, -diF/dt= 5600A/sec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 4,7 mJ mJ Qr 11 19 C C IRM 180 215 A A VF min. - typ. 1,25 1,20 max. 1,6 V V 2 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthJC RthCK - typ. 0,02 max. 0,21 0,40 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment fur mech. Befestigung mounting torque Schraube M6 screw M6 M1 -15 Al2O3 15 mm 8,5 mm 275 5 +15 Nm % Gewicht weight G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 300 250 Tvj = 25C Tvj = 125C 200 IC [A] 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 300 I C= f (VCE) Tvj= 125C 250 VGE = 8V VGE = 9V VGE = 10V 200 VGE = 12V VGE = 15V VGE = 20V IC [A] 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 300 Tvj = 25C Tvj = 125C 250 200 IC [A] 150 100 50 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 300 Tvj = 25C I F= f (VF) 250 Tvj = 125C 200 IF [A] 150 100 50 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 1,5,=RG,off = 1,5 , VCC= 300V, Tvj= 125C ,= , 10 9 8 7 E [mJ] 6 5 4 3 2 1 0 0 50 100 150 200 250 300 Eon Eoff Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 10 9 Eon E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 150A , VCC= 300V , Tvj = 125C 8 7 E [mJ] 6 5 4 3 2 1 0 0 2 Eoff Erec 4 6 8 10 12 14 RG [] 6 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 1 0,1 ZthJC [K / W] Zth:IGBT 0,01 Zth:Diode 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec] 1 8,9 0,0018 141,0 0,0487 2 110,0 0,0240 135,2 0,0169 3 74,0 0,0651 84,9 0,1069 4 17,0 0,6626 38,9 0,9115 : IGBT : IGBT : Diode : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 350 300 250 200 150 IC,Modul 100 50 0 0 100 200 300 400 IC,Chip VGE= +15V, R G,off = 1,5, Tvj= 125C , IC [A] 500 600 700 VCE [V] 7 (8) BSM 150 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC Gehausemae / Schaltbild Package outline / Circuit diagram 13 10 M5 2,8 x 0,5 6 1 17 2 6 3 6 7 23 80 94 23 17 5 4 6 7 1 3 5 2 4 8 (8) BSM 150 GB 60 DLC 2000-02-08 |
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