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| TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT5J321 GT5J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) :tf=0.05s(typ.) High speed Low switching loss :Eon=0.12mJ(typ.) :Eoff=0.10mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum Ratings (Ta=25) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol Ratings Unit VCES VGES IC ICP IF IFM PC Tj Tstg 600 20 5 10 5 10 28 150 -55150 V V A A W 2001-6- 1/6 TOSHIBA Preliminary Electrical Characteristics(Ta=25) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min Typ. GT5J321 Max 500 Unit IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff VF trr Rth(j-c) Rth(j-c) VGE=20V,VCE=0 VCE=600V,VGE=0 IC=0.5mA,VCE=5V IC=5A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=5A VGG=+15V,RG=100 (Note 1) (Note 2) 3.5 - 2.0 950 0.05 0.03 0.15 0.13 0.05 0.20 0.12 0.10 - 1.0 6.5 2.45 0.15 2.0 200 nA mA V V pF s mJ V ns Peak forward voltage Reverse recovery time Thermal resistance(IGBT) Thermal resistance(Diode) IF=5A,VGE=0 IF=5A,di/dt=-100A/s 4.46 /W 4.90 /W 2001-6- 2/6 TOSHIBA GT5J321 Reference IC - VCE VCE - VGE 20 10 8 Collector currentIC (A) Collector-emitter voltageVCE (V) Common emitte Tc = 25 15 16 Common emitter Tc = 25 20 6 10 12 10 5 4 9 8 2 VGE = 8V 4 IC = 2A 0 0 1 2 3 4 Collector-emitter voltageV CE (V) 5 0 0 4 8 12 16 Gate-emitter voltageVGE (V) 20 20 Collector-emitter voltageVCE (V) VCE - VGE Common emitter Tc = -40 VCE - VGE 20 Collector-emitter voltageVCE (V) Common emitter Tc = 125 16 16 12 12 20 10 8 8 5 4 10 IC = 5A 4 IC = 2A 0 0 4 8 12 16 Gate-emitter voltageV GE (V) 20 0 0 4 8 12 16 Gate-emitter voltageV GE (V) 20 IC - VGE Collector-emitter saturation voltageVCE(sat) (V) 10 Common emitter VCE = 5V 4 VCE(sat) - Tc Common emitter VGE = 15V 10 8 Collector currentIC (A) 3 5 2 6 IC = 2A 4 125 Tc = 25 -40 2 1 0 0 2 4 6 8 10 Gate-emitter voltageV GE (V) 12 14 0 -60 -20 20 60 100 140 Case tenper a () Case temperature cTc () 2001-6- 3/6 TOSHIBA GT5J321 Reference 1 Switching timeton, tr, td(on)(s) Switchingtime onon,trt,td(on) RGRG Switching time t , tr, d(on) - Switching timeton, tr, td(on)(s) 1 Switchingtime onont,trt,td(on) I- IC Switching time t , r, d(on) - C 0.1 ton td(on) 0.1 ton td(on) tr 0.01 tr 0.001 1 Common emitter VCC =300V VGG =15V IC =5A Tc=25 Tc=125 Note1 0.01 Common emitter VCC =300V Tc=25 VGG =15V Tc=125 R G =100 Note 0.001 0 1 2 3 Collector currentIC(A) 4 5 10 100 Gate resistanceR G() 1000 1 Switching timetoff, tf td(off)(s) Switching time toff,offf,ttfd(off) - R- RG Switching time t t , ,td(off) G Switching timetoff, tf, td(off)(s) 1 Switching time off,offf,tt,td(off) IC IC t t , fd(off) - Switc i h toff 0.1 toff td(off) tf Common emitter VCC =300V VGG =15V IC =5A Tc=25 Tc=125 Note1 0.1 td(off) 0.01 0.01 Common emitter VC C=300V Tc=25 VG G=15V Tc=125 RG =100 Note1 tf 0.001 0.001 1 10 100 Gate resistanceRG() Switching lossEon, Eoff - RG 1000 0 1 2 3 Collector currentIC(A) 4 5 1 Switching lossEon , Eoff(mJ) 1 Switching lossEon, Eoff - IC Common emitter VCC =300V VGG =15V RG =100 Tc=25 Tc=125 Note2 Switching lossEon , Eoff(mJ) Eon 0.1 Eon Eoff 0.1 Common emitter VCC =300V Tc=25 VGG =15V Tc=125 IC =5A Note2 Eoff 0.01 1 10 100 Gate resistanceRG() 1000 0.01 0 1 2 3 Collector currentI C(A) 4 5 2001-6- 4/6 TOSHIBA GT5J321 Reference C-VCE 1000 Collector emitter voltageVCE(V) 500 VCE, VGE - QG Common emitter RL =60 Tc=25 20 Cies Capacitance C (pF) 400 16 100 300 VCE=300V 12 200 8 10 Common emitter VGE=0 f=1MHz Tc=25 Coes Cres 200 100 100 4 1 0.1 1 10 100 Collector-emitter voltageVCE (V) 1000 0 0 10 20 30 Gate chargeQG(nC) 40 0 20 Common collector VGE=0 IF-VF 100 Reverse recovery currentIrr(A) trr, Irr - IF Common collector di/dt=-100A/s VGE=0 Tc=25 Tc=125 1000 16 Forward currentIF (A) 12 125 -40 trr 10 100 Irr 8 4 Tc=25 0 0 0.4 0.8 1.2 Forward voltageVF (V) 1.6 2 1 0 2 4 6 8 10 10 Forward currentIF(A) Reverse bias SOA 100 Safe operating area Safe operat i 100 Collector current IC (A) Ic max (pulsed)* 10 Ic max (continuous) 5 0 s* 1 0 0 s* * 1 ms Collector current IC (A) 10 DC operation 1 Single nonrepetitive pulse Tc=25 Curves must be dilated linearly with increase in temperature. * 1 0 ms * 1 Tj125 Tj125 VGE =15V VGE=15V =100 R =13 RGG 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 2001-6- 5/6 Reverse recovery timetrr(ns) Gate-emitter voltageVGE(V) TOSHIBA GT5J321 Reference 10 Transient thermal resistancerth(t) (/W) 2 rth(t) - tw 101 FRD 10 0 10-1 10-2 10-3 10-4 10-5 IGBT TC = 25 10-4 10-3 10-2 10-1 100 Puls e Pulse width twW(s) (s) 101 102 2001-6- 6/6 |
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