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PD-97197
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21 12.4A 300K Rads (Si) 0.21 12.4A
IRHNJ67234 250V, N-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier's R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 12.4 7.8 49.6 75 0.6 20 56 12.4 7.5 5.5 -55 to 150 300 (for 5s) 1.0 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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05/08/06
IRHNJ67234
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
250 -- -- 2.0 8.8 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.24 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.21 4.0 -- 10 25 100 -100 40 14 11 18 31 38 27 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.8A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 7.8A A VDS = 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 12.4A VDS = 125V VDD = 125V, ID = 12.4A, VGS = 12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1445 187 2.4 1.2
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12.4 49.6 1.2 654 5.15
Test Conditions
A
V ns C Tj = 25C, IS = 12.4A, VGS = 0V A Tj = 25C, IF = 12.4A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 1.67
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNJ67234
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage Up to 300K Rads (Si)
Min
250 2.0 -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS = 200V, VGS= 0V VGS = 12V, ID = 7.8A VGS = 0V, ID = 12.4A
-- 4.0 100 -100 10 0.21 1.2
Part numbers IRHNJ67234 and IRHNJ63234
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm )) Ag Xe Au 43 59 90
2
Energy
(MeV) 1217 823 1480
Range
(m) 112 66 80
@VGS = @VGS =
VDS (V)
@VGS = @VGS = @VGS = @VGS =
0V 250 250 75
-5V 250 250 75
-10V 250 250 -
-15V 250 50 -
-17V 100 -
-20V 50 -
300 250 200 150 100 50 0 0 -5 -10 VGS -15 -20
VDS
Ag Xe Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNJ67234
Pre-Irradiation
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
5.0V
1
5.0V
1
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12.4A
2.0
ID, Drain-to-Source Current (A)
TJ = 150C
10
T J = 25C
1.5
1.0
VDS = 50V 60s PULSE WIDTH 15 1 5 5.5 6 6.5 7 7.5 8 8.5 9 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNJ67234
2800 2400 2000 1600 1200 800 400 0 1
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = 12.4A 16 VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
Ciss Coss
12
8
Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 8 16 24 32 40 48 QG, Total Gate Charge (nC)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
10 T J = 150C 1
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
100s
1
0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
1ms
Tc = 25C Tj = 150C Single Pulse 1 10 100
10ms
1000
0.1
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHNJ67234
Pre-Irradiation
14 12
ID, Drain Current (A)
VGS RG VGS
VDS
RD
D.U.T.
+
10 8 6 4 2 0 25 50 75 100 125 150
10% VGS
-V DD
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNJ67234
100
EAS , Single Pulse Avalanche Energy (mJ)
15V
80
TOP BOTTOM
ID 5.5A 7.8A 12.4A
VDS
L
DRIVER
60
RG
D.U.T.
IAS tp
+ - VDD
A
40
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
20
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNJ67234
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.73 mH Peak IL = 12.4A, VGS = 12V A ISD 12.4A, di/dt 660A/s, VDD 250V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006
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