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| KSC5338 KSC5338 High Voltage Power Switch Switching Application * High Speed Switching * Wide SOA TO-220 2.Collector 3.Emitter 1 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1000 450 9 5 10 2 4 100 150 - 65 ~ 150 Units V V V A A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob Cib fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB =0 IC=1mA, IE=0 VCB = 800V, VBE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 0.5A VCE = 1V, IC = 2A IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A VCB = 10V, f =1MHz VEB=8V, IC=0, f =1MHz VEB = 6V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL=125 70 1000 14 200 2 500 15 6 0.55 Min. 1000 450 9 10 10 30 0.8 0.5 1.1 1.25 V V V V pF pF MHz ns s ns Typ. Max. Units V V V A A * Pulse Test : Pulse Width=5ms, Duty Cycle10% (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338 Typical Characteristics 5 100 IB = 1A IB=900mA V CE = 5V IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 3 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA 10 2 IB = 100mA 1 1 0 0 2 4 6 8 IB = 0 10 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE = 1V VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 IC = 10IB hFE, DC CURRENT GAIN 10 1 V BE(sat) 1 0.1 VCE(sat) 0.1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collect-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 1 V BE(sat) tSTG, tF [s], TIME tSTG 1 VCE (sat) 0.1 tF 0.01 0.01 0.1 1 10 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 6. Switching Time (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338 Typical Characteristics (Continued) 100 120 TJ=150 IC[A], COLLECTOR CURRENT 10 50s DC PC[W], POWER DISSIPATION 1000 100 80 1ms 1 60 5ms 40 0.1 20 0.01 10 100 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Safe Operating Area Figure 8. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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