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SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES
Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624.
D K F F D A H
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
C
G
J B E
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC ICP PC PC* Tj Tstg RATING -60 -50 -6 -3 -6 500 1 150 -55 0.8t) 150 UNIT V V V A A mW W
1
2
3
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
SOT-89
Marking
h FE Rank Lot No.
* : Package mounted on ceramic substrate(250mm2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time ICBO IEBO
)
TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100 VCE=-2V, IC=-3A IC=-2A, IB=-100 IC=-2A, IB=-100 VCE=-10V, IC=-50 VCB=-10V, f=1
PW=20s DC < 1% = INPUT VR I B1 R8 IB2 25
SYMBOL
MIN. 100 35 -
X
TYP. -0.35 -0.94 150 39 70 MAX. -1 -1 400 -0.7 -1.2 V V
Type Name
UNIT.
hFE(1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton
Storage Time
tstg
50 100 470 -25V
-
450
-
nS
Fall Time
tf 400
5V -10IB1=10IB2 =I C =1A
-
35
-
Note : hFE (1) Classification A:100 200, B:140 280, C:200
2001. 12. 6
Revision No : 3
1/3
KTB1124
I C - V CE
-5.0 COLLECOTR CURRENT I C (A) -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.4 -0.8 -1.2 -1.6 COLLECTOR CURRENT I C (A)
-200mA -100mA -50mA
I C - V BE
-3.2 -2.8 -2.4 -2.0
Ta=7 5C 25 C -25 C
VCE =-2V
-20mA -10mA -5mA IB =0
-1.6 -1.2 -0.8 -0.4 0 0 -0.2 -0.4 -0.6
-2.0
-0.8
-1.0
-1.2
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE EMITTER VOLTAGE VBE (V)
I C - V CE
-2.0 COLLECTOR CURRENT I C (A) -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10
IB =0 -2mA -14mA -12mA -10mA -8mA -6mA -4mA
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=75 C Ta=25 C Ta=-25 C VCE =-2V
100 50 30
-12 -14 -16 -18 -20
10 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300
Ta=-25 C Ta=25 C
V BE(sat) - I C
-10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) -5 -3
I C /I B=20
IC /I B =20
-100 -50 -30
Ta=75 C
-1 -0.5 -0.3
Ta=25 C
Ta=-25 C Ta=75 C
-10 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.1 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT IC (A)
2001. 12. 6
Revision No : 3
2/3
KTB1124
fT - IC
GAIN-BANDWIDTH PRODUCT f T (MHz) 500 300 OUTPUT CAPACITANCE Cob (pF) 1k
VCE =10V
C ob - VCB
100 50 30
f=1MHz
100 50 30
10 5 3
10 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
1 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (A)
COLLECTOR BASE VOLTAGE VCB (V)
COLLECTOR POWER DISSIPATION PC (W)
P C - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0
2 1 1 MOUNTED ON CERAMIC
SAFE OPERATING AREA
-10 -5 COLLECTOR CURRENT I C (A) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03
MOUNTED ON CERAMIC BOARD (250mm 2 x0.8t) Ta=25 C ONE PULSE I CP
10
SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C
s 1m s m 10 s 0m
I C MAX.
D
C
O
pe ra
tio n
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
-0.02 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR EMITTER VOLTAGE V CE (V)
2001. 12. 6
Revision No : 3
3/3

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