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| Variable Capacitance Diodes MA2ZV05 Silicon epitaxial planar type Unit : mm For VCO I Features * Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package INDICATES CATHODE 0.4 0.15 1 2 0.4 0.15 1.7 0.1 2.5 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 -55 to +150 Unit V C C 0.9 0.1 I Absolute Maximum Ratings Ta = 25C 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 8B I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.5 3.6 4.7 0.65 Conditions Min Typ Max 10 20.5 4.1 Unit nA pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 - 0.06 + 0.1 0.3 - 0.05 + 0.1 1.25 0.1 1 MA2ZV05 CD VR 100 50 f = 1 MHz Ta = 25C 120 25C Ta = 60C 80 - 40C Variable Capacitance Diodes IF V F 1.05 1.04 1.03 4V f = 1 MHz CD Ta VR = 1 V 2V 100 Diode capacitance CD (pF) 30 20 (mA) Forward current IF 10 60 5 3 2 40 20 0.98 0 0.97 0 1 CD(Ta) CD(Ta = 25C) 1.02 1.01 1.00 0.99 0 4 8 12 16 20 24 28 32 36 40 0 0.2 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (C) IR Ta 100 VR = 5 V Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 |
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