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| Schottky Barrier Diodes (SBD) MA3G762 Silicon epitaxial planar type (cathode common) Unit : mm 0.7 0.1 For switching power supply I Features * Forward current (average) IF(AV): 20 A type * Repetitive peak reverse voltage VRRM: 90 V type * High reliability caused by sealed in the TOP-3F (Full-pack package) * Cathode common dual type 15.0 0.5 7.2 0.3 5.0 0.2 3.2 0.2 21.0 0.5 15.0 0.2 3.2 0.1 3.5 12.7 0.3 0.3 Solder Dip 2.0 0.1 16.2 0.5 2.0 0.1 0.6 - 0.1 + 0.2 1.1 0.1 5.45 0.3 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 90 20 130 -40 to +125 -40 to +125 Unit V A A C C 10.9 0.5 1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F (TO-3F Full-Pack Package ) Marking Symbol: MA3G762 Internal Connection Note) * : Sine half-wave; 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 90 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 0.85 1.5 Unit mA V C/W Note) Rated input/output frequency: 100 MHz 1 MA3G762 IF V F 102 102 Schottky Barrier Diodes (SBD) IR V R 40 Ta = 125C PD(AV) IF(AV) Average forward power PD(AV) (W) 35 30 25 1/3 20 15 10 5 0 1/2 DC t0 t1 10 100C 25C Reverse current IR (mA) Forward current IF (A) Ta = 125C 10 100C 1 t0 / t1 = 1/6 1 10-1 10-1 10-2 10-2 25C 10-3 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 0 20 40 60 80 100 120 0 4 8 12 16 20 24 Forward voltage VF (V) Reverse voltage VR (V) Average forward current IF(AV) (A) IF(AV) TC 32 Average forward current IF(AV) (A) 28 24 20 16 1/6 12 t0 / t1 = 1/2 1/3 t0 t1 DC 8 4 0 20 40 60 80 100 120 140 Case temperature TC (C) 2 |
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