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Ordering number : ENN7076
MCH5702
TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode
MCH5702
DC / DC Converter Applications
Features
*
Package Dimensions
*
2.1
1.6
*
Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating 2200 high-density mounting. The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products.
0.25 0.25
[MCH5702]
0.3 4 5 0.15
0.65 2.0
0.07
3
2
1
5
4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Recified Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Symbol Conditions
0.85
1 : Base 2 : Emitter 3 : Anode 4 : Cathode 5 : Collector SANYO : MCPH5
1
2
3
Ratings 15 15 5 1.5 3 300 0.7 150 --55 to +125 30 30 0.7 10 --55 to +125 --55 to +125
Unit V V V A A mA W C C V V A A C C
Marking : PC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM N1501 TS IM TA-3391 No.7076-1/5
MCH5702
Electrical Characteristics at Ta=25C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 VF 3 IR C trr IR=0.5mA IF=0.3A IF=0.5A IF=0.7A VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 30 0.35 0.42 0.5 20 10 0.40 0.47 0.55 200 V V V V A pF ns ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=300mA VCB=10V, f=1MHz IC=750mA, IB=15mA IC=750mA, IB=15mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 15 15 5 40 180 20 200 450 9 130 0.85 200 1.2 0.1 0.1 560 MHz pF mV V V V V ns ns ns A A Symbol Conditions Ratings min typ max Unit
Electrical Connection
5 4
(Top view)
1
2
3
Switching Time Test Circuit
[TR]
PW=20s D.C.1% INPUT IB2 OUTPUT IB1 VR 50 RB
trr Test Circuit
[SBD]
Duty10% 100mA 10mA trr
+ 220F
+ 470F VCC=5V
10s --5V
VBE= --5V IC=20IB1= --20IB2=750mA
100mA
RL
50
100
10
No.7076-2/5
MCH5702
2.0
IC -- VCE
50m
20
30 mA
[TR]
1.0 0.9
IC -- VBE
[TR] VCE=2V
1.8
mA
Collector Current, IC -- A
10mA 8mA
0.8 0.7 0.6 0.5 0.4
Collector Current, IC -- A
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3
40 mA
A
6mA
4mA
Ta=75C
0 0.2 0.4 0.6
2mA
0.3 0.2 0.1
IB=0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0.8 1.0 1.2 IT01694
Collector-to-Emitter Voltage, VCE -- V
1000 7
IT01692
VCE(sat) -- IC
Base-to-Emitter Voltage, VBE -- V
1000 7
[TR] IC / IB=20
VCE(sat) -- IC
25C --25C
[TR] IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
100 7 5 3 2
2
C 5
100 7 5 3 2
25
--25
C
75
C
Ta=
C 75 5C --2
Ta=
C
10 7 5 0.01
10 7 5 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
10 7
IT01702
VBE(sat) -- IC
Collector Current, IC -- A
1000 7 5
IT01704
[TR] IC / IB=50
hFE -- IC
25C
[TR] VCE=2V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5
Ta=75C
DC Current Gain, hFE
3 2
3 2
--25C
1.0 7 5 3 2
Ta= --25C
25C
100 7 5 3 2
75C
0.1 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
10 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
1000
IT01706
f T -- IC
Collector Current, IC -- A
100 7
IT01696
[TR] VCE=2V
Cob -- VCB
[TR] f=1MHz
Gain-Brandwidth Product, f T -- MHz
7 5 3 2
Output Capacitance, Cob -- pF
5 3 2
100 7 5 3 2
10 7 5 3 2
10 0.01
1.0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A
IT01698
Collector-to-Base Voltage, VCB -- V
IT01700
No.7076-3/5
MCH5702
5 3 2
ASO
ICP=3A IC=1.5A
DC
10 0m
[TR] 100s
0.8 0.7
PC -- Ta
M
[TR]
Collector Dissipation, PC -- W
s 0 50 s ms 1m 10
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2
0.6 0.5 0.4 0.3 0.2 0.1 0
ou
nt
ed
op
on
era
s
ac
tio
er
n
am
ic
bo
ar
d(
60
0m
m2 !
0.
8m
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board(600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
m
)
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
2 1.0
IT03621
Ambient Temperature, Ta -- C
100 7 5 3 2
IT03622
IF -- VF
[SBD]
IR -- VR
[SBD]
Reverse Current, IR -- mA
7
Forward Current, IF -- A
5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 IT01670
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0
1 Ta=
25C
100C 75C
25 C Ta= 1
10
0 C
C5 0C 25C
50C
75
25C
5
10
15
20
25
30 IT01671
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.7
PF(AV) -- IO
Reverse Voltage, VR -- V
[SBD]
0.6
0.5
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (1) Rectangular wave
(2) (4)
(3)
0.4
0.3
360
0.2
Sine wave
0.1 180 0 0 360 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Average Forward Current, IO -- A
IT01672
No.7076-4/5
MCH5702
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
PS No.7076-5/5

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