|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N04SUG PACKAGE TO-252 (MP-3ZK) FEATURES * Channel temperature 175 degree rating * Super low on-state resistance RDS(on) = 6.5 m MAX. (VGS = 10 V, ID = 28 A) * Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 20 55 220 77 1.2 175 -55 to +175 30 90 V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Note2 Note2 IAR EAR Notes 1. PW 10 s, Duty Cycle 1% 2. Tch 150C, VDD = 20 V, RG = 25 , VGS = 20 0 V THERMAL RESISTANCE The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17401EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan 2004 The mark NP55N04SUG ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 28 A VGS = 10 V, ID = 28 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 28 A, VGS = 10 V, RG = 0 MIN. TYP. MAX. 1 100 UNIT A nA V S 2.0 12 3.0 23 5.0 3400 320 210 30 52 78 12 4.0 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 6.5 5100 480 380 66 130 156 30 95 m pF pF pF ns ns ns ns nC nC nC VDD = 32 V, VGS = 10 V, ID = 55 A IF = 55 A, VGS = 0 V IF = 55 A, VGS = 0 V, di/dt = 100 A/s 63 12 20 0.94 37 40 VF(S-D) trr Qrr 1.5 V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet D17401EJ2V0DS NP55N04SUG TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C 1000 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 RD S G (V o S( n) d it e Li m V ) i0 =1 ID(pulse) PW ID(DC) DC 1i m i =1 i 00 s s 1i 0 w Po 10 m co Se i D er si is t io pa s y ar nd B do ke ra n d it e m Li 1 TC = 25C Single Pulse w n d it e m Li 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V rth(t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(ch-A) = 125C/W 100 10 Rth(ch-C) = 1.95C/W 1 0.1 Single Pulse 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17401EJ2V0DS 3 NP55N04SUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 250 200 ID - Drain Current - A 1000 100 VDS = 10 V Pulsed 150 100 50 VGS = 10 V ID - Drain Current - A 10 1 0.1 0.01 TA = -55C 25C 125C 175C Pulsed 0 0 0.4 0.8 1.2 1.6 2 VDS - Drain to Source Voltage - V 0.001 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3.5 3 2.5 2 1.5 1 0.5 0 -100 VDS = VGS ID = 250 A -50 0 50 100 150 200 100 VDS = 10 V Pulsed TA = -55C 25C 125C 175C 10 1 0.1 1 10 100 1000 ID - Drain Current - A Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 10 8 6 4 2 Pulsed 0 1 10 100 1000 ID - Drain Current - A 10 8 6 4 2 Pulsed 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V 28 A ID = 55 A VGS = 10 V 4 Data Sheet D17401EJ2V0DS NP55N04SUG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF 10 8 6 4 2 0 -100 VGS = 10 V ID = 28 A Pulsed -50 0 50 100 150 200 Ciss 1000 VGS = 0 V f = 1 MHz 100 0.1 1 10 Coss Crss 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 10 VDD = 32 V 20 V 8V VGS 4 ID = 55 A Pulsed 2 0 0 10 20 30 40 50 60 70 QG - Gate Charge - nC 8 6 VGS - Gate to Source Voltage - V VDD = 20 V VGS = 10 V RG = 0 100 td(off) tr td(on) tf 45 40 35 30 25 20 15 10 5 0 10 VDS 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 0V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A VGS = 10 V di/dt = 100 A/s VGS = 0 V 10 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D17401EJ2V0DS 5 NP55N04SUG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 1.0 TYP. 6.50.2 5.1 TYP. 4.3 MIN. 4 2.30.1 0.50.1 No Plating 6.10.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 1 0.8 2 3 No Plating 0 to 0.25 0.50.1 1.0 1.14 MAX. 2.3 2.3 0.760.12 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 0.51 MIN. Data Sheet D17401EJ2V0DS NP55N04SUG * The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of NP55N04SUG |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |