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| NTE161 Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc Features: D High Current Gain-Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 1.0A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO VCB = 15V, IE = 0 VCB = 15V, IE = 0, TA = +150C 30 3.0 15 - - - - - - - - - - 0.01 1.0 V V V A A Symbol Test Conditions Min Typ Max Unit Collector-Emitter Sustaining Voltage VCEO(sus) IC = 3mA, IB = 0 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Amplifier Power Gain Power Output Collector Efficiency Gpe Po VCB = 12V, IC = 6mA, f = 200MHz VCB = 15V, IC = 8mA, f = 500MHz VCB = 15V, IC = 8mA, f = 500MHz 15 30 25 - - - - - - dB mW % fT Cobo Cibo NF IC = 10mA, VCE = 10V, f = 100MHz, Note 1 VCB = 10V, IE = 0, f = 140kHz VCB = 0, IE = 0, f = 140kHz VEB = 0.5V, IC = 0, f = 140kHz IC = 1mA, VCE = 6V, RG = 400, f = 60MHz 600 - - - - - - - - - - 1.7 3.0 2.0 6.0 MHz pF pF pF dB hFE VCE(sat) VBE(sat) IC = 3mA, VCE = 1V IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA 20 - - - - - - 0.4 1.0 V V Symbol Test Conditions Min Typ Max Unit Note 1. fT is defined as the frequency at which |hfe| extrapolates to unity. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45 Case .040 (1.02) |
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