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| Datasheet File OCR Text: |
| NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Average Rectified Forward Current (VR = 45V, TC = +105C), IF(AV) Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A Non-Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A Peak Repetitive Reverse Current, Per Diode (2s, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . . . . +175C Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/s Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Electrical Characteristics (Per Diode): (Note 1) Parameter Instantaneous Forward Voltage Symbol vF Test Conditions iF = 20A, TC = +125C iF = 30A, TC = +125C iF = 30A, TC = +25C Instantaneous Reverse Current iR VR = 45V, TC = +125C VR = 45V, TC = +25C Min - - - - - Typ - - - - - Max 0.60 0.72 0.76 100 1 Unit V V V mA mA Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. TO3P Type Package .190 (4.82) .615 (15.62) K .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) A K A .215 (5.47) TO218 Type Package .626 (15.92) Max .166 (4.23) Dia Max .200 (5.08) Max .050 (1.27) K .815 (20.72) .147 (3.76) .490 (12.44) A1 K A2 .500 (12.7) Min .215 (5.47) .110 (2.79) |
Price & Availability of NTE6090
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