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PD412PI PD412PI s Features 1. High sensitivity (TYP. 0.5A/W at p= 780nm) 2. High speed response Compact Package Type Photodiode with Condensing Lens s Outline Dimensions Detector center (Unit : mm) 4.0 0.2 2.4 R1.75 0.1 1.5 (2.5 ) 5.0 0.2 8 8 + 1.5 - 1.0 2.0 0.2 0.5 8 Transparent epoxy resin Rest of gate MAX. 0.4 0.8 s Applications 1. Optoelectronic switches 2. MD (mini disk) laser power monitors 2.54 g MIN. 0.5 17.15 2-0.45 + 0.2 - 0.1 2.15 8 0.2 0.1 2-0.4 + - 1 2 0.2 8 1 8 2 3.75 1 Anode 2 Cathode *Tolerance : 0.15 * ( ) : Reference dimensions g Dimension at lead root 8 8 s Absolute Maximum Ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol Rating VR 32 P 150 - 25 to +85 T opr - 40 to +100 T stg 260 T sol (Ta=25C) Unit V mW C C C Soldering area *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 2.15mm PD412PI s Electro-optical Characteristics Parameter Shortcircuit current Shortcircuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Response time Half intensity angle *2 E V : Illuminance by CIE standard light source A (tungsten lamp) (Ta=25 C) Symbol Isc T Id T Ct p K tr tf *2 *2 Conditions EV = 100 lx EV = 100 lx VR = 10V, Ee= 0 VR = 10V, Ee= 0 VR = 3V, f= 1MHZ l = 780nm RL= 1k VR= 10V MIN. 3.5 - TYP. 4.7 0.2 0.5 3.5 100 800 0.5 250 250 45 MAX. 6.3 10 5.0 350 - Unit A % /C nA times/10C pF nm A/W ns Rise Time Fall Time Fig. 1 Power Dissipation vs. Ambient Temperature 200 Fig. 2 Shortcircuit Current vs. Illuminance 1000 Ta=25C 150 Shortcircuit current I SC ( A) Power dissipation P (mW) 100 10 100 1 50 0.1 0 - 25 0 25 50 75 85 100 0.01 1 10 100 1000 10000 Ambient temperature T a ( C) Illuminance E V (lx) PD412PI Fig. 3 Spectral Sensitivity 100 90 80 Fig. 4 Dark Current vs. Ambient Temperature 10 -7 Ta=25C 10 -8 VR=10V Relative sensitivity (%) 70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 1200 (A) Dark current I d 10 -9 10 - 10 10 10 -11 -12 10 -13 Wavelength (nm) - 25 0 25 50 75 100 Ambient temperature T a (C) Fig. 5 Dark Current vs. Reverse Voltage 1000 Ta=25C Fig. 6 Terminal Capacitance vs. Reverse Voltage 300 f=1MHz Ta=25C 100 Terminal capacitance C t ( pF ) 250 (pA) 200 Dark current I d 10 150 100 1 50 0 0.01 0.1 0.01 0.1 1 10 100 0.1 1 10 100 Reverse voltage V R (V) Reverse voltage VR ( V) Fig. 7 Relative Output vs. Ambient Temperature 115 Light source : CIE standard light source A (tungsten lamp) Fig. 8 Radiation Diagram - 20 - 10 0 100 -30 80 +10 (Ta = 25C ) + 20 110 + 30 105 -40 Relative sensitivity (%) Relative output (%) 60 + 40 100 -50 40 + 50 + 60 95 -60 -70 -80 90 20 + 70 + 80 + 90 85 - 25 -90 0 25 50 75 100 0 Ambient temperature T a (C) Angular displacement PD412PI Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) 100 GL538 Fig. 10 Response Time vs. Load Resistance 100 VR=10V Ta=25C Relative output (%) 10 GL537 Response time t r,tf ( s ) 10 1 tr, tf 1 0.1 0.1 10 IF = 20mA Ta = 25C -4 10 -3 10 -2 10 -1 0.01 10 1 10 2 10 3 10 4 10 5 Distance between emitter and detector d (m) Load resistance R L ( ) Test Circuit for Response Time Semiconductor laser IOUT = 0.1mA PD412PI + Output RL 10V Input 90% Output tr tf 10% Pulse generator q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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