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| RFP15N08L Data Sheet June 1999 File Number 2840.1 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09804. Features * 15A, 80V * rDS(ON) = 0.140 * Design Optimized for 5 Volt Gate Drive * Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits * SOA is Power Dissipation Limited * 175oC Rated Junction Temperature * Logic Level Gate * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP15N08L PACKAGE TO-220AB BRAND RFP15N08L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-234 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP15N08L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N08L Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 80 80 10 15 40 72 0.48 -55 to 175 300 260 UNITS V V V A A W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = 25oC, VDS = 65V, VGS = 0V TC = 125oC, VDS = 65V, VGS = 0V MIN 80 1 VGS = 0-10V VGS = 0-5V VGS = 0-1V VDD = 64V, ID = 15A, RL = 4.27 TYP MAX 2.5 1 50 100 1.05 3.0 0.140 4.5 40 325 325 325 80 45 3 2.083 UNITS V V A A nA V V V ns ns ns ns nC nC nC oC/W Gate to Source Leakage Current Drain to Source On Voltage IGSS VDS(ON) VGS = 10V, V = 0V DS ID = 7.5A, VGS = 5V ID = 15A, VGS = 5V Drain to Source On Resistance (Note 2) Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case rDS(ON) V(plateau) td(ON) tr td(OFF) tf Qg(TOT) Qg(5) Qg(TH) RJC ID = 7.5A, VGS = 5V VDS = 15V, ID = 15A VDD = 40V, ID = 7.5A, RGS = 6.25, VGS = 5V Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s maximum, duty cycle = 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 7.5A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 225 MAX 1.4 UNITS V ns 6-235 RFP15N08L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) ID MAX CONTINUOUS 10 DC OP ER Unless Otherwise Specified 100 TC = 25oC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE AT I 0.8 0.6 0.4 0.2 0 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ON 0 50 100 150 0 1 TC, CASE TEMPERATURE (oC) 10 100 VDS, DRAIN SOURCE VOLTAGE (V) 1000 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. FORWARD BIAS SAFE OPERATING AREA 40 IDS, DRAIN TO SOURCE CURRENT (A) IDS, DRAIN TO SOURCE CURRENT PULSE DURATION = 80s DUTY CYCLE 0.5% MAX TC = 25oC 30 VGS = 10V VGS = 5V VGS = 4.5V 20 VGS = 4V VGS = 3.5V 10 VGS = 3V VGS = 2.5V VGS = 2V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 VGS = 7.5V 16 14 12 -40oC 10 8 6 4 2 0 0 125oC 25oC VDS = 10V PULSE DURATION = 80s DUTY CYCLE 0.5% MAX 125oC -40oC 5 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS 0.3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 5V PULSE DURATION = 80s DUTY CYCLE 0.5% MAX ON RESISTANCE () 0.2 TC = 125oC 0.1 25oC 2.0 VGS = 10V, ID = 15A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 rDS(ON), DRAIN TO SOURCE 1 0.5 -40oC 0 0 2 4 6 8 10 12 ID, DRAIN TO SOURCE CURRENT (A) 14 16 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 6-236 RFP15N08L Typical Performance Curves 1.4 VGS = VDS NORMALIZED GATE THRESHOLD VOLTAGE ID = 250A C, CAPACITANCE (pF) 1.2 1400 1200 1000 800 600 400 200 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 0 0 CRSS COSS CISS Unless Otherwise Specified (Continued) 1600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1 0.8 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 DRAIN TO SOURCE VOLTAGE (V) BVDSS 45 FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 GATE TO SOURCE VOLTAGE (V) RL = 4 IG(REF) = 0.5mA VGS = 5V GATE SOURCE VOLTAGE VDD = BVDSS VDD = BVDSS 4 8 6 30 15 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 2 0 20 IG (REF) IG (ACT) t, TIME (s) 80 IG (REF) IG (ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS 6-237 RFP15N08L Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 10V VGS + Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) IG(REF) 0 VGS = 5V DUT IG(REF) FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-238 |
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