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 RHP020N06
Transistors
4V Drive Nch MOS FET
RHP020N06
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA.
(1)Gate (2)Drain
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
Applications Switching
(3)Source
Abbreviated symbol : LR
Packaging specifications and hFE
Package Type RHP020N06 Code Basic ordering unit (pieces) Taping T100 1000
Inner circuit
DRAIN
GATE
2
1
SOURCE
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg
Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 When mounted on a 40 40 0.7mm ceramic board
Limits 60 20 2 8 2 8 500 2 150 -55 to +150
Unit V V A A A A mW W C C
2
Thermal resistance
Parameter Channel to ambient
When mounted on a 40 40 0.7mm ceramic board
+
+
Symbol Rth(ch-a)
Limits 250 62.5
Unit C/W C/W
+
+
1/2
RHP020N06
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage
Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. - 60 - 1.0 - - - 2.0 - - - - - - - - - -
Typ.
- - - - 150 200 240 - 140 50 40 7 10 22 18 7 1 2
Max.
10 - 1 2.5 200 280 340 - - - - - - - - 14 - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions
VGS= 20V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 10V ID= 2A, VGS= 4.5V ID= 2A, VGS= 4V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 30V ID= 1A VGS= 10V RL=30 RG=10 VDD 30V VGS= 10V ID= 2A
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit V
Conditions
IS= 2A, VGS=0V
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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Price & Availability of RHP020N06
Newark

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RHP020N06FRAT100
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ROHM Semiconductor Mosfet, Aec-Q101, N-Ch, 60V, Sot-89; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Rohm RHP020N06FRAT100 250: USD0.527
100: USD0.6
50: USD0.7
25: USD0.786
10: USD0.89
1: USD1.09
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RHP020N06FRAT100
86AK6104
ROHM Semiconductor Mosfet, N-Ch, 60V, 2A, Sot-89 Rohs Compliant: Yes |Rohm RHP020N06FRAT100 10000: USD0.313
6000: USD0.328
4000: USD0.352
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DigiKey

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Avnet Americas

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RHP020N06T100
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Mouser Electronics

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RHP020N06T100
755-RHP020N06T100
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Verical

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8000: USD0.2163
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500: USD0.4472
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Bristol Electronics

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TTI

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25000: USD0.24
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TME

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RHP020N06T100
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ROHM Semiconductor Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 1000: USD0.227
250: USD0.241
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RFQ
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RHP020N06FRAT100
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Avnet Asia

Part # Manufacturer Description Price BuyNow  Qty.
RHP020N06T100
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Avnet Silica

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Chip1Stop

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ROHM Semiconductor Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) MPT T/R 16000: USD0.163
8000: USD0.173
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CoreStaff Co Ltd

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RHP020N06T100
ROHM Semiconductor RoHS(Ship within 1day) - D/C 2023 1000: USD0.228
500: USD0.236
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500: USD0.236
100: USD0.281
50: USD0.296
10: USD0.454
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New Advantage Corporation

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