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 SDH03
Absolute maximum ratings
Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg NPN 100 100 6 1.5
PNP + NPN Darlington H-bridge
(Ta=25C)
External dimensions E
***
SD
Specification PNP -60 -60 -6 -1.5 -2.5 (PW1ms, Du10%) -0.1 3 (Ta=25C) 150 -40 to +150 41.6
Unit V V V A A A W C C C/W
2.5 (PW1ms, Du100%) 0.1
j-a
sEquivalent circuit diagram
2 R3 R4 1 15 16 13 14 3 R1 R2 4 8 11 12 9 10 7 6
5
R3: 4k typ R4: 100 typ
R1: 4k typ R2: 200 typ
Characteristic curves
IC-VCE Characteristics (Typical)
NPN
2.5
IB=10mA
4m A
IC-VBE Temperature Characteristics (Typical)
PNP NPN
2.5
IB=-5m
-2m
-2.5
A 0.6m
(VCE=4V)
A
2m
A
1.2
mA
-1.2mA -1.0mA
A
2.0
0.4m
A
-2.0
2.0
-0.8mA
0.3mA
IC (A)
1.5
-1.5
-0.6mA -0.5mA
1.5
IC (A)
0.5
-0.5
-0.3mA
0.5
0 1 2 3 4 5 6
0 0
-1
-2
-3
-4
-5
-6
0 0
1
Ta=
125 C 75C 25C -30C
1.0
-1.0
-0.4mA
IC (A)
1.0
2
3
VCE (V)
VCE (V)
VBE (V)
hFE-IC Characteristics (Typical)
NPN
10000
(VCE=4V)
typ
PNP
10000 5000
(VCE=-4V)
PNP
-2.5
(VCE=-4V)
5000
Typ
-2.0
1000
-1.5
IC (A)
hFE
hFE
1000
500
-1.0
500
Ta=125C 75C 25C -30C
100 50
100 0.03 0.05 0.1 0.5 1 2.5
-0.5
30 -0.03
-0.05
-0.1
-0.5
-1
-2.5
0 0
-1
-2
-3
IC (A)
IC (A)
VBE (V)
hFE-IC Temperature Characteristics (Typical)
NPN
10000 5000
2 =1 5 C
C 5
PNP
(VCE=4V)
10000 5000
(VCE=-4V)
Ta
7
25
C
C 0
-3
1000
1000 500
500
C 25 =1 5C 7 C Ta 25 C 0 -3
hFE
hFE
100
100 0.03 0.05
0.1
0.5
1
2.5
50 -0.03 -0.05 -0.1
-0.5
-1
-2.5
IC (A)
IC (A)
168
SDH03
Electrical characteristics
NPN Symbol min ICBO IEBO VCEO hFE VCE(sat) VBE(sat) 100 2000 12000 1.3 2.2 V V Specification typ max 10 3 Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA -60 2000 12000 -1.4 -2.2 V V Specification min typ max -10 -3 PNP Unit Conditions VCB=-60V VEB=-6V IC=-10mA VCE=-4V, IC=-1A IC=-1A, IB=-2mA
(Ta=25C)
A
mA V
A
mA V
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
NPN
3
-3
j-a-PW Characteristics
PNP
50
NPN
VCE (sat) (V)
VCE (sat) (V)
j-a (C / W)
2
-2
IC=-2A
10
IC=2A IC=1A IC=0.5A
IC=-1A
5
1
-1
IC=-0.5A
0 0.1
0.5
1
5
10
50
100
0 -0.1
-0.5
-1
-5
-10
-50
1 1
5
10
50 100
500 1000
IB (mA)
IB (mA)
PW (mS)
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
3
(IC / IB=1000)
PNP
-3
(IC / IB=1000)
PNP
50
VCE (sat) (V)
j-a (C / W)
2
VCE (sat) (V)
-2
10
Ta=-30
C
5
1
25C
-30C
-1
Ta=125C 75C
75C
25C
125C
0 0.2
0.5
1
2.5
0 -0.2
-0.5
-1
-2.5
1 1
5
10
50 100
500
1000
IC (A)
IC (A)
PW (mS)
Safe Operating Area (SOA)
NPN
5
0 10 s
PT-Ta Characteristics
PNP
3
4 3
-5
2
1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation
10 0 s
1m
1m
1
10 m s
s
-1
2
IC (A)
0.5
-0.5
PT (W)
1 0 0
IC (A)
s
10 m s
1
0.1
Single Pulse
0.05 Without Heatsink 0.03 Ta=25C 3 5 10 50 100
Single Pulse
-0.1 Without Heatsink
Ta=25C
-0.05 -3
-5
-10
-50
-100
50
100
150
VCE (V)
VCE (V)
Ta (C)
169


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