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Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6800S.5 2 A /500 Volts NPN switching Transistor Features: * Switching Transistor * Small Footprint Surface Mount Device with Excellent Thermal Properties * TX, TXV, S-Level Screening Available * PNP Complimentary Parts Available (SFT1192 Series) DESIGNER'S DATA SHEET SMD.5 Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Continuous Collector Current Power Dissipation @ TC = 25C Power Dissipation @ TA = 25C Operating & Storage Temperature Maximum Thermal Resistance Junction to Case and to Ambient Note1: Derated 333 mW/C above TC= 105C Note2: Derated 13.33 mW/C above TA= 75C note 1 note 2 Symbol VCEO VCBO VEBO IC PD Top & Tstg RJC RJA Value 400 500 10 2 15 1 -65 to +200 3 (typ 2) 75 Units Volts Volts Volts Amps W C C/W PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088A Doc Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6800S.5 Symbol IC = 20 mA IC = 100 uA IE = 20 uA VCB = 400 V VCE = 450 V, VBE= 1.5 V VEB = 6.0 V VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCE=10V, IC =50mA, f= 20 MHz VCB = 30V, f = 1...2 MHz VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA; RB1 =R B2 = 330 VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA (RB1 =R B2 = 100 O, PW= 2s) Electrical Characteristic 4/ Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio * Min 400 500 10 -- -- -- 50 40 15 -- -- 25 -- -- Typ -- 800 11.5 0.05 0.01 0.01 85 95 50 0.25 0.8 35 30 115 Max -- -- -- 0.2 0.2 0.2 -- -- -- 0.5 1.0 -- 40 700 Units Volts Volts Volts A A A BVCEO BVCBO BVEBO ICBO ICEV IEBO HFE1 HFE2 HFE4 VCE(sat)1 VBE(sat)1 fT Cobo ton Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Frequency Transition (Small Signal Current Gain) @ f= 20 MHz Output Capacitance Turn-On Time Volts Volts MHz pF ns Turn-Off Time toff -- 1700 2000 ns NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088A Doc |
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